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We present a simple drop-casting method for preparing multiferroic nano-composite film where BiFeO3 (BFO) nanoparticles (NPs) were evenly dispersed into polyvinyl alcohol (PVA) polymer. BFO NPs used in this work were synthesized by the conventional sol-gel method, having diameter of tens of nm and being in good crystallinity. The BFO NPs were loaded into a highly insulating PVA polymer solution as filler. The multiferroic properties of the film reveal ferromagnetic ordering due to the uncompensated spiral ordering and saturated ferroelectric curves due to the cut-off of current leakage. Moreover, the prepared films show high flexibility and their multiferroicities are preserved well even in a high curved condition, reflecting the possibility for fabricating wearable devices based on multiferroic materials. [ABSTRACT FROM AUTHOR]

Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65Sb0.35 surface intrinsic-n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density Ds is estimated as approximately 1.91×1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65Sb0.35 SIN+ structure is further demonstrated. [ABSTRACT FROM AUTHOR]

Temperature-dependent photoreflectance measurements are employed to characterize the electronic band structure of InGaPN grown on GaAs substrates. In addition to the fundamental band gap, the upper subband E+ is observed as predicted by the band anticrossing (BAC) model. By eliminating the contributions of the epitaxial-strain and atomic-ordering effects in InGaPN and also assigning the localized state energy EN introduced by an isolated N to be 2.040 eV at 293 K, the interaction potential V is determined as 1.449±0.170 eV. The incorporation of a temperature-dependent EN level into the BAC model fits the experimental data better than assuming EN to be a constant. This contrasts with previously published results and so provides a different view of the temperature dependence of the EN level in InGaPN. [ABSTRACT FROM AUTHOR]

This study examines terahertz radiation from a series of In0.52Al0.48As and GaAs surface-intrinsic-N+ structures (SIN+) with surface-intrinsic layers of various thicknesses. The built-in electric fields in the SIN+ structures are used as the bias. Experimental results indicate that the amplitudes of the THz emission are independent of the built-in electric fields in the emitters when the built-in electric fields exceed the corresponding critical electric fields of the semiconductors. In contrast, the amplitudes of the THz emission are proportional to the thickness of the intrinsic layer and, therefore, the number of photo-excited charged carriers. [ABSTRACT FROM AUTHOR]

We demonstrate the effect of Ti thickness on the contact resistance between GaN nanowires and Ti/Au electrodes. We have carried out systematic characterization of many GaN nanowires contacted by various Ti/Au electrodes. We conclude that the average resistance is reduced by almost six orders of magnitude as Ti thickness increases from 0 to 20 nm, and the resistance value then saturates when the Ti thickness further increases. Our observation can be explained by the formation of TiOx through the reaction of surface oxide and the Ti layer. Scanning Auger microscopy of the Au/Ti/SiO2 interface also supports this explanation. [ABSTRACT FROM AUTHOR]