25 results on '"Hwang, J. S."'
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2. Multiferroic properties of stretchable BiFeO3 nano-composite film
3. Enhancement of the magneto-optical properties in 2-dimensional bilayered magnetic anti-dot lattice
4. GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy
5. Strong surface Fermi level pinning and surface state density in GaAs0.65Sb0.35 surface intrinsic-n+ structure
6. Drift current dominated terahertz radiation from InN at low-density excitation
7. Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates
8. Comprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect
9. Multiferroic properties of stretchable BiFeO3 nano-composite film.
10. Terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors
11. Effects of weak ordering of InGaPN
12. Effect of gold coating on local oxidation using an atomic force microscope
13. Studies of band alignment and two-dimensional electron gas in InGaPN∕GaAs heterostructures
14. Effect of Ti thickness on contact resistance between GaN nanowiresand Ti∕Au electrodes
15. SiC-capped nanotip arrays for field emission with ultralow turn-on field
16. Electrical transport through 60 base pairs of poly(dG)-poly(dC) DNA molecules
17. Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates
18. Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure
19. Unambiguous photoreflectance determination of electric fields using phase suppression
20. Study of surface Fermi level and surface state distribution in InAlAs surface‐intrinsic‐n+ structure by photoreflectance
21. Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures
22. Strong surface Fermi level pinning and surface state density in GaAs0.65Sb0.35 surface intrinsic-n+ structure.
23. Band anticrossing in InGaPN alloys induced by N-related localized states.
24. Terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors.
25. Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes.
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