9 results on '"Hyder S."'
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2. Saturation velocity determination for In0.53Ga0.47As field-effect transistors.
3. Vapor-phase epitaxial growth of InGaAs lattice matched to (100) InP for photodiode application.
4. Vapor-phase epitaxial growth of quaternary In1-xGaxAsyP1-y in the 0.75-1.35-eV band-gap range.
5. The incorporation of Ga during LPE growth of In0.53Ga0.47As on (111)B and (100) InP substrates.
6. Liquid-phase-epitaxial growth of lattice-matched In0.53Ga0.47As on (100) -oriented InP.
7. Field‐assisted photoemission to 2.1 microns from a Ag/p‐In0.77Ga0.23As photocathode
8. The incorporation of Ga during LPE growth of In0.53Ga0.47As on (111)Band (100) InP substrates
9. Vapor‐phase epitaxial growth of quaternary In1−xGaxAsyP1−yin the 0.75–1.35‐eV band‐gap range
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