Search

X-ray ptychography, a powerful scanning lensless imaging technique, has become attractive for nondestructively imaging internal structures at nanoscale. Stage positioning overhead in conventional step-scan ptychography is one of the limiting factors on the imaging throughput. In this work, we demonstrate the use of advanced fly scan ptychography to achieve high-resolution ptychograms of modern integrated circuits on a large field-of-view at millimeter scale. By completely removing stage overheads between scan points, the imaging time for millimeter-size sample can be significantly reduced. Furthermore, we implement the orthogonal probe relaxation technique to overcome the variation of illumination across the large scan area as well as local vibrations. The capability of x-ray ptychography shown here is broadly applicable for various studies, which requires both high spatial resolution and large scan area.

We report an elasticrelaxation and increase in local strain variation correlated with ferroelectric domains within epitaxial BiFeO3thin filmnanostructuresfabricated by combined electron-beam and focused ion-beam nanolithography. Nano-focused x-ray diffraction microscopy provided new insights into the relationship between film strain and ferroelectric domains in nanostructures, namely: (i) an out-of-plane (C-axis) elasticrelaxation of as much as −1.8% Δc/c in a BFO film-based nanostructure relative to the planar filmlattice constant; (ii) an out-of-plane rotation trending from the center towards all released edges of the nanostructure; and (iii) an increase of inter-domain strain variation within the nanostructure of approximately 10 times the inter-domain variation found within the planar film, correlated with ferroelectric domain boundaries as confirmed by piezoresponse-force microscopy. These results indicate that the release of in-plane BFO/SRO mismatch strain in a planar film is taken up by the local ferroelectric domain structure after patterning, resulting in greatly increased mechanical strain gradients within the structure.

Here we introduce angle-resolved piezoresponse force microscopy (AR-PFM), whereby the sample is rotated by 30° increments around the surface normal vector and the in-plane PFM phase signals are collected at each angle. We obtained the AR-PFM images of BaTiO3 single crystal and cube-on-cube epitaxial (001) BiFeO3 (BFO) thin film on SrRuO3/SrTiO3 substrate, and confirmed that the AR-PFM provides more unambiguous information on the in-plane polarization directions than the conventional PFM method. Moreover, we found eight additional in-plane polarization variants in epitaxial BFO thin films, which are formed to mitigate highly unstable charged domain boundaries.

Systematic studies are presented on the effects of cantilever buckling in vector piezoresponse force microscopy (V-PFM) imaging of polarization domains in thin-film based (001)-oriented BiFeO3 nanostructures, as observed through the coupling of out-of-plane and in-plane PFM images. This effect is a strong function of the laser spot position on the cantilever, being strongest at the free end, and insignificant at 60% of the cantilever length from the pivot point. This finding provides a unique approach to V-PFM imaging of ferroelectric polarization domains, yielding three dimensional PFM images without sample rotation in the plane.