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Your search keyword '"Jun-Tae Jang"' showing total 2 results
Start Over Author "Jun-Tae Jang" Journal applied physics letters
2 results on '"Jun-Tae Jang"'

1. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

Author

Sung-Jin Choi, Hyun-Suk Kim, Jun Tae Jang, Dong Myong Kim, Byung Du Ahn, Jozeph Park, and Dae Hwan Kim

Subjects
Electron mobility, Materials science, Physics and Astronomy (miscellaneous), business.industry, Transistor, Direct current, Analytical chemistry, Field effect, Sputter deposition, law.invention, Thin-film transistor, law, Sputtering, Optoelectronics, Thin film, business
Abstract

The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

Published
2015
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2. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation.

Author

Jun Tae Jang, Jozeph Park, Byung Du Ahn, Dong Myong Kim, Sung-Jin Choi, Hyun-Suk Kim, and Dae Hwan Kim

Subjects
*DC sputtering, *INDIUM gallium zinc oxide, *THIN film transistors, *COMPUTER simulation, *RELIABILITY in engineering, *PEROXIDES
Abstract

The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping. [ABSTRACT FROM AUTHOR]

Published
2015
Full Text
View/download PDF

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