1. Electrical properties of polycrystalline SrSi2
- Author
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Takao Furubayashi, Motoharu Imai, Takao Nakama, Hideki Abe, Takashi Naka, and Katsuma Yagasaki
- Subjects
Electron mobility ,Materials science ,Semiconductor ,Physics and Astronomy (miscellaneous) ,Electrical resistance and conductance ,Condensed matter physics ,Band gap ,Hall effect ,Electrical resistivity and conductivity ,business.industry ,Crystallite ,business - Abstract
The electrical properties of polycrystalline SrSi2 were examined by electrical resistivity measurements at temperatures ranging from 2 to 760 K and Hall coefficient measurements at temperatures ranging from 10 to 300 K. These measurements revealed that SrSi2 is a narrow-gap semiconductor with an energy gap of 0.035 eV whose dominant carriers are holes.
- Published
- 2005
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