206 results on '"Keller, S"'
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2. Recombination dynamics of a 268 nm emission peak in Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple quantum wells
3. Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films
4. On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors
5. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors
6. In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge
7. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
8. Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
9. High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
10. In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors
11. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
12. Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
13. On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors.
14. Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (0001¯) GaN
15. Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures
16. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
17. Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition
18. Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
19. Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
20. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
21. High quality AlN grown on SiC by metal organic chemical vapor deposition
22. Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition
23. Growth and characterization of N-polar InGaN∕GaN multiquantum wells
24. Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films
25. Cracking of III-nitride layers with strain gradients
26. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
27. Nitride-based high electron mobility transistors with a GaN spacer
28. Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
29. Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
30. Publisher’s Note: “Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing” [Appl. Phys. Lett. 85, 5254 (2004)]
31. Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing
32. Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
33. Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN
34. Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures
35. Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films
36. GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design
37. Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition
38. Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors
39. Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors
40. Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells
41. Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
42. Dislocation reduction in GaN films through selective island growth of InGaN
43. Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells
44. Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
45. In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge.
46. Femtosecond Z-scan measurement of GaN
47. Strain relaxation of InxGa1−xAs during lateral oxidation of underlying AlAs layers
48. High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
49. High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
50. Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride
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