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Your search keyword '"Krishnan S"' showing total 13 results
Start Over Author "Krishnan S" Journal applied physics letters
13 results on '"Krishnan S"'

12. Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics.

Author

Pant, G., Gnade, A., Kim, M. J., Wallace, R. M., Gnade, B. E., Quevedo-Lopez, M. A., Kirsch, P. D., and Krishnan, S.

Subjects
ELECTRIC insulators & insulation, SEPARATION (Technology), FERROELECTRIC thin films, FERROELECTRIC crystals, X-ray spectroscopy, CRYSTALLIZATION, DIELECTRICS
Abstract

The electrical and chemical properties of ultrathin HfON and HfSiON gate dielectrics are investigated as a function of physical thickness. Grazing incidence x-ray diffraction was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm films of HfON and HfSiON after a 1000 °C-10 s activation annealing. X-ray photoelectron spectroscopy was used to determine the chemical composition of the dielectrics. No evidence of crystallization was detected in 1.5 nm HfON or HfSiON films after the activation annealing. The HfON film showed crystallization at a 2.0 nm thickness whereas the 2.0 nm HfSiON film remained amorphous. [ABSTRACT FROM AUTHOR]

Published
2006
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13. High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH[sub 3] post-deposition anneal.

Author

Akbar, Mohammad Shahariar, Gopalan, S., Cho, H.-J., Onishi, K., Choi, R., Nieh, R., Kang, C. S., Kim, Y. H., Han, J., Krishnan, S., and Lee, Jack C.

Subjects
METAL oxide semiconductor field-effect transistors, DIELECTRICS
Abstract

Electrical and chemical characteristics of metal-oxide semiconductor field-effect transistors (MOSFETs) prepared by low-thermal-budget (∼600 °C) NH[sub 3] post-deposition annealing of HfSiON gate dielectric have been investigated. Compared to control Hf-silicate, HfSiON showed excellent thickness scalability, low leakage current density (J), and superior thermal stability. With proper annealing-time optimization, effective oxide thickness as low as 9.2 Å with Or< 100 mA/cm² at gate voltage V[sub g] = -1.5 V has been achieved. C-V hysteresis of HfSiON MOSFET was found to be small (<20 mV). Unlike NH[sub 3] surface nitridation (NH[sub 3] pre-treatment prior to Hf-silicate deposition), no degradation in G[sub m] (transconductance), I[sub d]-V[sub g], (drain current-gate voltage), or I[sub d] - V[sub d] (drain current-drain voltage) characteristics has been observed. [ABSTRACT FROM AUTHOR]

Published
2003
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