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Organic–inorganic halide perovskites (HOIPs) are promising light-electric conversion materials for optoelectronic devices. Improving the light responsiveness properties of HOIPs is of great significance for the development of the optoelectronics industry. In this study, we have investigated the effect of pressure on the optoelectronics properties of the archetypical representative HOIPs methylammonium lead iodide nanoplates. An enhancement of the photocurrent accompanied by 4 times-prolonged carrier lifetime, enhanced photoluminescence (PL) intensity, and narrowed bandgap were observed via applying pressure to about 0.36 GPa, while these physical properties got worse with further compression. Strikingly, when released to ambient conditions, the photocurrent is further increased to 4.5 times and the carrier lifetime is prolonged to 1.5 times of the corresponding values for an initial sample, while the bandgap slightly blueshifted and the PL intensity slightly reduced. These results suggest that the increased photocurrent may be related to the increased carrier lifetime of the quenched sample, which gives more time for the separation of photoelectrons from vacancies before recombination. This study demonstrated that pressure engineering can be a real possibility for improving the light responsiveness of the HOIPs material in practical applications. [ABSTRACT FROM AUTHOR]

As one of the most likely alternatives to traditional vapor compression refrigeration technology, solid refrigeration technology based on the barocaloric effect (BCE) has attracted extensive attention in recent years. Spin-crossover (SCO) compounds are considered suitable for working at low driving pressures due to high-pressure sensitivity and small hysteresis width. However, the entropy change (ΔSSCO) of the SCO compound is smaller than that of other excellent barocaloric materials (plastic crystals and two-dimensional perovskites). Here, we report the BCE of the SCO compound {Fe(pz)2(BH3CN)2} (pz = pyrazine) with a smaller molar mass and a third source of entropy change besides electron and vibrational entropy changes. Compound {Fe(pz)2(BH3CN)2} exhibits high pressure sensitivity ( d T 1 / 2 d P = 20.2 K kbar−1) as well as entropy change (Δ S SCO = 202 J kg−1 K−1). The maximum values of reversible isothermal entropy change (ΔSit,rev,max) and adiabatic temperature change (ΔTad,rev,max) at 1 kbar are only 103 J kg−1 K−1 and ∼0 K, respectively, due to the hysteresis behavior. However, at sufficiently high driving pressures, ΔSit,rev,max exceeds 200 J kg−1 K−1, and ΔTad,rev,max can reach ∼47 K, which exceeds all SCO compounds reported in BCE studies and is comparable to some plastic-crystalline and two-dimensional perovskite barocaloric materials. The excellent BCE of the SCO compound {Fe(pz)2(BH3CN)2} is mainly due to its small molar mass, which makes the unit mass compound exhibit higher ΔSSCO, while the introduction of the third source of entropy change—the reorientation entropy change (ΔSreo), only plays a small role. This is expected to promote the practical application of SCO compounds as barocaloric refrigerants. [ABSTRACT FROM AUTHOR]

Two-dimensional layered metal dichalcogenides have given rise to considerable interest in electronics and optoelectronics fields because of their excellent physical and chemical properties and promising applications. Tin disulfide (SnS2) is an important member of them due to its environment-friendly and resource-rich characteristics. Here, a series of in situ electrical transport experiments and photocurrent measurements under high pressure have been performed to investigate the electrical and opto-electrical properties of 4H-SnS2. With increasing pressure, the electrical resistivity of 4H-SnS2 decrease significantly, leading to a transition from semiconducting to metallic state above 58.6 GPa. The increase in pressure results in a substantial enhancement in photoelectric activity, indicating the extensive potential of utilizing pressure as a trigger for in situ optoelectronic applications. Combined with our previous results of x-ray diffraction and optical absorption at high pressure, pressure-induced structural distortion, bandgap narrowing, metallization, and enhancement of photoelectric activity of 4H-SnS2 are tunable and reversible, which are of great significance for both fundamental research and device design. [ABSTRACT FROM AUTHOR]

As a member of the emerging MXenes family, Nb2CS2 offers distinctive superconductivity, excellent electrical properties, and outstanding chemical stability, making it potentially useful for energy storage, medical imaging, and quantum computing. Herein, we systematically investigate how ultrahigh pressure affects the electrical properties of Nb2CS2. The results indicate that Nb2CS2 retains robust superconductivity with T c > 8 K up to the maximum applied pressure of 146.8 GPa. Moreover, the upper critical magnetic field H c 2 (0) of Nb2CS2 increases with pressure, and the Pauli limit is violated at pressures greater than 120 GPa. Meanwhile, H c 2 (0) increases to 19.3 T at 146.8 GPa, which is 4.8 times greater than at the initial pressure. Further analysis suggests that the significant enhancement of H c 2 (0) below 30 GPa comes from the sharp pressure-induced rise of carrier concentration as the interlayer distance decreases, and the significant increase in H c 2 (0) above 86 GPa may come from enhanced spin–orbit coupling or the possible unconventional superconducting pairing mechanisms. These results provide insights into the superconducting properties of MXene materials and offer guidelines for further research on electronic transport in Mxenes under ultrahigh pressure. [ABSTRACT FROM AUTHOR]

Silicon is a long-standing photosensitive material because of its unique photoelectronic properties and mature manufacturing technology. However, silicon photodetectors are generally limited by weak photoresponse in the near-infrared region. In this work, pressure is used as an effective means of tuning the photoresponse of silicon, specifically in the near-infrared region. Silicon has two different types of photoresponse under pressure. In the pressure range from 1 atm to 10 GPa, huge pressure-enhanced photocurrent is observed under illumination by a xenon lamp and near-infrared light (1064 nm). At 10 GPa, the photocurrent density (Jph), responsivity (R), and external quantum efficiency are increased 40-fold from those at 1.2 GPa. Interestingly, above 10 GPa, a unique pressure-induced positive–negative photoresponse switch is found along with the phase transformation from the semiconductive phase (Si I) to the metallic phase (β-tin). Further experiments show that the photothermal effect is the main factor for negative photoresponse. All these pressure-induced properties give silicon more possibilities in the further design of visible and infrared photodetectors. [ABSTRACT FROM AUTHOR]