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Amorphous SiOx-based memory films are fabricated at room temperature, and study on their resistive switching characteristics and improvement approaches is performed. Multilevel resistive states with large ratio 1: ∼102: 3 × 105 and long retention exceeding 2 × 106 s at ambient temperature and humidity are observed in Cu/SiOx (9 nm)-W (∼2 nm)-SiOx (9 nm)/Pt ultrathin stack. Nonvolatile switching is consistently realized in microscopy. Based on investigations of microscopic conduction and microstructure, tungsten incorporation with copper as relay bridges for conducting filaments is proposed to attribute to the performance improvement and the multilevel switching mechanism. [ABSTRACT FROM AUTHOR]

We present a report on the nanopatterning of an epitaxial ultrathin film of Fe3O4 with room-temperature (ferri)magnetism using atomic force microscopy (AFM). Fe3O4 thin films with atomically flat surfaces were grown using laser molecular-beam epitaxy on a MgAl2O4(111) single-crystal substrate. (Nanowire) were constructed on Fe3O4 thin film by applying an electric field between an AFM conductive tip and the surface of the film. The minimum width and height in the resulting nanowire are 48 nm and 2 nm, respectively. The patterned region of the Fe3O4 film surface possesses a resistance which is 105 times higher than the unpatterned region. Furthermore, magnetic force microscopy measurements also revealed that magnetization of the patterned region is strongly suppressed. [ABSTRACT FROM AUTHOR]