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Your search keyword '"Lin, Chun-Liang"' showing total 14 results
Start Over Author "Lin, Chun-Liang" Journal applied physics letters
14 results on '"Lin, Chun-Liang"'

2. Visualizing correlation between carrier mobility and defect density in MoS2 FET.

Author

Chen, Fu-Xiang Rikudo, Kawakami, Naoya, Lee, Chang-Tsan, Shih, Pen-Yuan, Wu, Zi-Cheng, Yang, Yong-Cheng, Tu, Hao-Wei, Jian, Wen-Bin, Hu, Chenming, and Lin, Chun-Liang

Subjects
CHARGE carrier mobility, SCANNING tunneling microscopy, CARRIERS, SEMICONDUCTOR devices, FIELD-effect transistors, POINT defects, MOLYBDENUM disulfide
Abstract

Transition metal dichalcogenides (TMDs) with only a few atoms thickness provide an excellent solution to scale down current semiconductor devices. Many studies have demonstrated that molybdenum disulfide (MoS2), a member of TMDs, is promising as a channel material to fabricate field-effect transistors (FETs). However, the carrier mobility in MoS2 FET is always far lower than the theoretical prediction. Although this poor performance can be attributed to the defects, it still lacks a quantitative analysis clarifying the correlation between carrier mobility and defect density. In this work, by using scanning tunneling microscopy, we directly counted the defects in MoS2 FETs with different carrier mobility. We found that vacancies and impurities equally contribute to carrier mobility and the total defect density induces a power-law decreasing tendency to the carrier mobility of MoS2 FET. Our current results directly prove that the reduction of point defects can exponentially improve the carrier mobility of FETs made by TMDs. [ABSTRACT FROM AUTHOR]

Published
2022
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