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The Ag/SiO2/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of ~10², satisfactory endurance of >500 cycles, good retention property of >2000 s, and fast operation speed of <100 ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO2/ ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density. [ABSTRACT FROM AUTHOR]

Interband transitions of a lattice matched In0.34Al0.66As0.85Sb0.15 film epitaxy on InP (InAlAsSb/InP) has been characterized using thermoreflectance (TR) measurements in the temperature range between 20 and 300 K. The low-temperature TR spectrum of InAlAsSb clearly shows a lot of interband transition features present at energies ranging from 1.25 to 5.5 eV at 20 K. The observed interband transitions include one broadened feature, two excitonic peaks, and three of the other critical-point transitions consisted in the zinc-blende InAlAsSb. Transition energies for the features are analyzed and their transition origins are characterized. [ABSTRACT FROM AUTHOR]

A stoichiometric, uniform, and amorphous hafnium oxide thin film is deposited by an atomic layer deposition process. The as-deposited hafnium oxide films showed superior electrical properties compared to zirconium oxides, including a dielectric constant of 23, a flatband voltage shift of +0.3 V, a hysteresis of 25 mV, an interfacial trap density of 1.8 × 10[sup 11] cm[sup -2] eV[sup -1], and a leakage current density several orders of magnitude lower than SiO[sub 2] at an equivalent oxide thickness of 9.3 Å, suitable for metal-oxide-semiconductor device applications. The thermal stability of hafnium oxide on silicon was determined to be better than that of zirconium oxide. Post-deposition annealing in oxygen and ammonia further improved the thermal stability of HfO[sub 2] to 1000 and 1100 °C, respectively. [ABSTRACT FROM AUTHOR]

Studies the high breakdown voltage symmetric of a high electron mobility transistor (HEMT). Fabrication of the HEMT by metalorganic chemical-vapor deposition; Improved electron mobility.

A lattice-matched δ-doped In[sub 0.34]Al[sub 0.66]As[sub 0.85]Sb[sub 0.15]/InP heterostructure field-effect transistor (HFET) which provides large band gap (∼1.8 eV), high Schottky barrier height (φ[sub B]>0.73 eV), and large conduction-band discontinuity (ΔE[sub c]>0.7 eV) has been proposed. In[sub 0.34]Al[sub 0.66]As[sub 0.85]Sb[sub 0.15]/InP heterostructures are shown to be type II heterojunctions with the staggered band lineup. This HFET demonstrates a output conductance of less than 1 mS/mm. Two-terminal gate-source breakdown voltage is more than 20 V with a leakage current as low as 170 μA at room temperature. High three-terminal off-state breakdown voltage as high as 36 V, and three-terminal on-state breakdown voltage as high as 18.6 V are achieved. The gate voltage swing is also significantly improved. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]