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Your search keyword '"Liu, X. L."' showing total 27 results
Start Over Author "Liu, X. L." Journal applied physics letters
27 results on '"Liu, X. L."'

16. Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films

Author

Cong, G. W., primary, Peng, W. Q., additional, Wei, H. Y., additional, Han, X. X., additional, Wu, J. J., additional, Liu, X. L., additional, Zhu, Q. S., additional, Wang, Z. G., additional, Lu, J. G., additional, Ye, Z. Z., additional, Zhu, L. P., additional, Qian, H. J., additional, Su, R., additional, Hong, C. H., additional, Zhong, J., additional, Ibrahim, K., additional, and Hu, T. D., additional

Published
2006
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21. Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP

Author

Fung, S., primary, Zhao, Y. W., additional, Beling, C. D., additional, Xu, X. L., additional, Gong, M., additional, Sun, N. F., additional, Sun, T. N., additional, Chen, X. D., additional, Zhang, R. G., additional, Liu, S. L., additional, Yang, G. Y., additional, Qian, J. J., additional, Sun, M. F., additional, and Liu, X. L., additional

Published
1998
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22. Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films.

Author

Yang, A. L., Song, H. P., Liang, D. C., Wei, H. Y., Liu, X. L., Jin, P., Qin, X. B., Yang, S. Y., Zhu, Q. S., and Wang, Z. G.

Subjects
PHOTOLUMINESCENCE, SPECTRUM analysis, POSITRON annihilation, CHEMICAL vapor deposition, THIN films, NITROGEN, ELECTRIC properties of zinc, MAGNESIUM oxide
Abstract

Temperature-dependent photoluminescence characteristics of non-polar m-plane ZnO and ZnMgO alloy films grown by metal organic chemical vapor deposition have been studied. The enhancement in emission intensity caused by localized excitons in m-plane ZnMgO alloy films was directly observed and it can be further improved after annealing in nitrogen. The concentration of Zn vacancies in the films was increased by alloying with Mg, which was detected by positron annihilation spectroscopy. This result is very important to directly explain why undoped Zn1-xMgxO thin films can show p-type conduction by controlling Mg content, as discussed by Li et al. [Appl. Phys. Lett. 91, 232115 (2007)]. [ABSTRACT FROM AUTHOR]

Published
2010
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23. Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy.

Author

Song, H. P., Yang, A. L., Wei, H. Y., Guo, Y., Zhang, B., Zheng, G. L., Yang, S. Y., Liu, X. L., Zhu, Q. S., Wang, Z. G., Yang, T. Y., and Wang, H. H.

Subjects
PHOTOELECTRON spectroscopy, ELECTRON spectroscopy, FREE electron theory of metals, ELECTRON emission, WURTZITE
Abstract

In2O3 is a promising partner of InN to form InN/In2O3 heterosystems. The valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy. The valence band of In2O3 is found to be 1.47±0.11 eV below that of InN, and a type-I heterojunction with a conduction band offset (CBO) of 0.49–0.99 eV is found. The accurate determination of the VBO and CBO is important for use of InN/In2O3 based electronic devices. [ABSTRACT FROM AUTHOR]

Published
2009
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24. Anisotropic ferro- and piezoelectric properties of sol-gel-grown Bi3.15Nd0.85Ti3O12 films with two different orientations on Pt/Ti/SiO2/Si.

Author

Lu, C. J., Liu, X. L., Chen, X. Q., Nie, C. J., Le Rhun, Gwenael, Senz, Stephan, and Hesse, Dietrich

Subjects
*THIN films, *PIEZOELECTRICITY, *FERROELECTRICITY, *CRYSTALLIZATION, *SOLID state electronics, *ANISOTROPY
Abstract

Bi3.15Nd0.85Ti3O12 thin films of two different preferred orientations were sol-gel grown on Pt/Ti/SiO2/Si. Using different heating rates during crystallization, either films containing 65% columnar grains with (104)/(014) orientation or fine-grained films with a predominant c-axis orientation were obtained. Anisotropic ferroelectric and piezoelectric properties were determined, with a remanent polarization 2Pr=46.4 μC/cm2 and a piezoelectric coefficient d33=17 pm/V in a predominantly (104)/(014)-oriented film, but only 2Pr=16.7 μC/cm2 and d33=5 pm/V in a predominantly c-axis-oriented film. These values confirm that the polarization vector of this material is close to the crystallographic a axis. [ABSTRACT FROM AUTHOR]

Published
2006
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25. Microstructure and ferroelectric properties of sol-gel derived Bi3.15Nd0.85Ti3O12 thin films on Pt/Ti/SiO2/Si(100).

Author

Li, J. H., Qiao, Y., Liu, X. L., Nie, C. J., Lu, C. J., Xu, Z. X., Wang, S. M., Zhang, N. X., Xie, D., Yu, H. C., and Li, J. Q.

Subjects
SOLID state electronics, THIN films, COLLOIDS, SURFACES (Technology), DIELECTRIC devices, STEREOLOGY, MICROMECHANICS, CAPACITORS, FERROELECTRICITY
Abstract

Bi3.15Nd0.85Ti3O12 (BNdT) thin films were deposited on Pt/Ti/SiO2/Si substrates using a sol-gel process. The film annealed at 750°C is composed of grains of 50–100 nm in diameter. The fine grains show nearly random orientations. “Micropores” were frequently observed at the junctions of the grains and they are mostly amorphous, while sometimes containing very fine crystalline particles with sizes of only a few nanometers. The BNdT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization and the coercive field were in the range of 41–43 μC/cm2 and 70–84 kV/cm, respectively. The BNdT capacitors did not show any significant fatigue up to 5×109 switching cycles at a frequency of 1 MHz. [ABSTRACT FROM AUTHOR]

Published
2004
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26. Erratum: “Anisotropic ferro- and piezoelectric properties of sol-gel grown Bi3.15Nd0.85Ti3O12 films with two different orientations on Pt/Ti/SiO2/Si” [Appl. Phys. Lett. 89, 062905 (2006)]

Author

Lu, C. J., Liu, X. L., Chen, X. Q., Nie, C. J., Le Rhun, Gwenael, Senz, Stephan, and Hesse, Dietrich

Subjects
*PIEZOELECTRICITY
Abstract

A correction to the article "Anisotropic ferro- and piezoelectric properties of sol-gel grown Bi3.15Nd0.85Ti3O12 films with two different orientations on Pt/Ti/SiO2/Si" that was published in previous issue is presented.

Published
2008
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27. Compensation ratio-dependent concentration of a V[sub In]H[sub 4] complex in n-type liquid encapsulated Czochralski InP.

Author

Fung, S., Zhao, Y. W., Beling, C. D., Xu, X. L., Gong, M., Sun, N. F., Sun, T. N., Chen, X. D., Zhang, R. G., Liu, S. L., Yang, G. Y., Qian, J. J., Sun, M. F., and Liu, X. L.

Subjects
SEMICONDUCTOR doping, ABSORPTION spectra
Abstract

The concentration of hydrogen–indium vacancy complex V[sub In]H[sub 4] in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V[sub In]H[sub 4] complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10[sup 16] cm[sup -3] in as-grown liquid encapsulated Czochralski InP. The concentration of the V[sub In]H[sub 4] complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
1998
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