Search

Your search keyword '"Lou, J. C."' showing total 13 results
Start Over Author "Lou, J. C." Journal applied physics letters
13 results on '"Lou, J. C."'

1. Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor

Author

Chen, Hsin-lu, primary, Chang, Ting-Chang, additional, Young, Tai-Fa, additional, Tsai, Tsung-Ming, additional, Chang, Kuan-Chang, additional, Zhang, Rui, additional, Huang, Sheng-Yao, additional, Chen, Kai-Huang, additional, Lou, J. C., additional, Chen, Min-Chen, additional, Shih, Chih-Cheng, additional, Huang, Syuan-Yong, additional, and Chen, Jung-Hui, additional

Published
2014
Full Text
View/download PDF

2. Characteristics of hafnium oxide resistance random access memory with different setting compliance current

Author

Su, Yu-Ting, primary, Chang, Kuan-Chang, additional, Chang, Ting-Chang, additional, Tsai, Tsung-Ming, additional, Zhang, Rui, additional, Lou, J. C., additional, Chen, Jung-Hui, additional, Young, Tai-Fa, additional, Chen, Kai-Huang, additional, Tseng, Bae-Heng, additional, Shih, Chih-Cheng, additional, Yang, Ya-Liang, additional, Chen, Min-Chen, additional, Chu, Tian-Jian, additional, Pan, Chih-Hung, additional, Syu, Yong-En, additional, and Sze, Simon M., additional

Published
2013
Full Text
View/download PDF

3. Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process

Author

Chang, Kuan-Chang, primary, Tsai, Tsung-Ming, additional, Zhang, Rui, additional, Chang, Ting-Chang, additional, Chen, Kai-Huang, additional, Chen, Jung-Hui, additional, Young, Tai-Fa, additional, Lou, J. C., additional, Chu, Tian-Jian, additional, Shih, Chih-Cheng, additional, Pan, Jhih-Hong, additional, Su, Yu-Ting, additional, Syu, Yong-En, additional, Tung, Cheng-Wei, additional, Chen, Min-Chen, additional, Wu, Jia-Jie, additional, Hu, Ying, additional, and Sze, Simon M., additional

Published
2013
Full Text
View/download PDF

4. Performance and characteristics of double layer porous silicon oxide resistance random access memory

Author

Tsai, Tsung-Ming, primary, Chang, Kuan-Chang, additional, Zhang, Rui, additional, Chang, Ting-Chang, additional, Lou, J. C., additional, Chen, Jung-Hui, additional, Young, Tai-Fa, additional, Tseng, Bae-Heng, additional, Shih, Chih-Cheng, additional, Pan, Yin-Chih, additional, Chen, Min-Chen, additional, Pan, Jhih-Hong, additional, Syu, Yong-En, additional, and Sze, Simon M., additional

Published
2013
Full Text
View/download PDF

5. The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory

Author

Huang, Jen-Wei, primary, Zhang, Rui, additional, Chang, Ting-Chang, additional, Tsai, Tsung-Ming, additional, Chang, Kuan-Chang, additional, Lou, J. C., additional, Young, Tai-Fa, additional, Chen, Jung-Hui, additional, Chen, Hsin-Lu, additional, Pan, Yin-Chih, additional, Huang, Xuan, additional, Zhang, Fengyan, additional, Syu, Yong-En, additional, and Sze, Simon M., additional

Published
2013
Full Text
View/download PDF

6. Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices

Author

Chen, Kai-Huang, primary, Zhang, Rui, additional, Chang, Ting-Chang, additional, Tsai, Tsung-Ming, additional, Chang, Kuan-Chang, additional, Lou, J. C., additional, Young, Tai-Fa, additional, Chen, Jung-Hui, additional, Shih, Chih-Cheng, additional, Tung, Cheng-Wei, additional, Syu, Yong-En, additional, and Sze, Simon M., additional

Published
2013
Full Text
View/download PDF

10. Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor.

Author

Hsin-lu Chen, Ting-Chang Chang, Tai-Fa Young, Tsung-Ming Tsai, Kuan-Chang Chang, Rui Zhang, Sheng-Yao Huang, Kai-Huang Chen, Lou, J. C., Min-Chen Chen, Chih-Cheng Shih, Syuan-Yong Huang, and Jung-Hui Chen

Subjects
ULTRAVIOLET radiation, SUPERCRITICAL fluids, THIN film transistors, ZINC oxide thin films, SPUTTERING (Physics), KIRKENDALL effect
Abstract

A low-temperature ultra-violet (UV) light enhanced supercritical CO2 (SCCO2) fluid treatment is employed to improve the performance of In-Ga-Zn-O (IGZO) thin film transistor (TFT) device. In this study, amorphous IGZO film deposited by sputtering is investigated in SCCO2 ambient under different illumination conditions. After SCCO2 treatment with UV exposure, the mobility and subthreshold swing of the TFT can be significantly improved. A model is proposed to explain the mechanism, and the improvement is due to the reduction of dangling bonds at the grain boundary. With the help of UV, dangling bonds can be effectively passivated by OH chemical groups. [ABSTRACT FROM AUTHOR]

Published
2014
Full Text
View/download PDF

11. Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application.

Author

Yang, F. M., Chang, T. C., Liu, P. T., Chen, U. S., Yeh, P. H., Yu, Y. C., Lin, J. Y., Sze, S. M., and Lou, J. C.

Subjects
NANOCRYSTALS, FERROELECTRIC RAM, HAFNIUM oxide, TRANSMISSION electron microscopy, NICKEL
Abstract

A distributed charge storage with Ni nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated in this study. The mean size and aerial density of the Ni nanocrystals are estimated to be about 5 nm and 3.9×1012/cm2, respectively. The nonvolatile memory device with Ni nanocrystals exhibits 1 V threshold voltage shift under 4 V write operation. The device has a long retention time with a small charge lose rate. Besides, the endurance of the memory device is not degraded up to 106 write/erase cycles. [ABSTRACT FROM AUTHOR]

Published
2007
Full Text
View/download PDF

12. Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices.

Author

Yang, F. M., Chang, T. C., Liu, P. T., Yeh, P. H., Chen, U. S., Yu, Y. C., Lin, J. Y., Sze, S. M., and Lou, J. C.

Subjects
NANOCRYSTALS, FERROELECTRIC RAM, SEMICONDUCTOR nanocrystals, NANOPARTICLES, CRYSTALS, FERROELECTRIC devices, FERROELECTRIC crystals
Abstract

The nonvolatile memory device with multilayer nanocrystals has advantages such as the memory effects can be increased by the increasing density of the nanocrystals and the whole retention characteristic can be improved. There are much more electrons that can be stored in the double layer than single layer nanocrystal memory device. The double layer CoSi2 nanocrystals have better retention characteristic than the single layer. The good retention characteristic of the double layer device is due to the Coulomb-blockage effects on the top layer nanocrystals from the bottom layer nanocrystals. So, the memory effects of the nonvolatile memory device can be improved by using the double layer nanocrystals. [ABSTRACT FROM AUTHOR]

Published
2007
Full Text
View/download PDF

13. Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide.

Author

Yang, F. M., Chang, T. C., Liu, P. T., Yeh, P. H., Yu, Y. C., Lin, J. Y., Sze, S. M., and Lou, J. C.

Subjects
NANOCRYSTALS, FERROELECTRIC RAM, OXIDES, DIELECTRICS, SEMICONDUCTOR industry, MANUFACTURED products
Abstract

In this letter, the Co nanocrystals using SiO2 and HfO2 as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to ∼1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 106 write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry. [ABSTRACT FROM AUTHOR]

Published
2007
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results