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Homoepitaxial film and semi-insulating bulk β-Ga2O3 with (001) orientation were studied using terahertz time-domain spectroscopy (THz-TDS) in the frequency region from 0.2 to 3.0 THz parallel to the [100] and [010] directions. The static permittivity of the bulk was determined to be 10.0 and 10.4 along the a-axis and b-axis, respectively, and the refractive index values at 0.2 THz are 3.17 and 3.23 for each axis. The electrical resistivity of the epilayer was extracted with good accuracy by employing the Drude–Lorentz model and without the use of electrical contacts. This noninvasive and contact-free material evaluation through THz-TDS proves to be a powerful tool for probing and obtaining various types of information about β-Ga2O3 materials such as bulk and thin films for the development of β-Ga2O3-based device applications.

Due to its efficient coupling with electron spins, the application of terahertz magnetic nearfield in metallic microstructures has been attracting attention. While paramagnetic materials that exhibit magneto-optical effect have been known to enable visualization of the terahertz magnetic fields (magneto-optical sampling), the low field-detection sensitivity has been setting a practical limit to the broader application of such a method. Here we propose and experimentally demonstrate that the terahertz magnetic nearfield-detection sensitivity of magneto-optical sampling with terbium-gallium-garnet crystal can be drastically enhanced by cooling the crystal down to cryogenic temperatures in accordance with Curie's law. Our result paves the way for the efficient characterization of the terahertz magnetic nearfield in planer metamaterials.

We report the strong yellow emission of bulk ZnO single crystals irradiated with the high-power gyrotron beam. Hydrothermally grown bulk crystals with high conductivity are irradiated at room temperature with up to 60-W output of a sub-terahertz gyrotron wave source. During gyrotron irradiation, the high-conductivity crystals exhibit intense emissions with a peak of around 2 eV (600 nm) and a longer-wavelength tail. The sample temperatures were also elevated from room temperature to above 1000 K by irradiation. However, when heated up to 1250 K using a heater without irradiation, the ZnO crystals do not exhibit similar visible emissions. We then use the generalized Planck's radiation in non-equilibrium states as an explanation of our experimental observations. The emission peak intensity can be enhanced by the gyrotron-induced non-equilibrium states, and the emission peak position can be related to the Urbach energy. With high intensities in the visible wavelengths, the emissions of the irradiated crystal...

This letter reports an approach to realize coherent radiation at the fundamental frequency of the wave that is resonant with the electron beam in a Smith-Purcell (SP) free-electron laser (FEL). We found that a two-dimensional grating structure equipped with a dielectric substrate could provide an electromagnetic mode which shows the property of a surface wave in the vacuum region where the beam-wave interaction occurs, and operates as a radiative wave in the dielectric region. Thus, an electron beam holding medium energy resonant with the mode could radiate at the fundamental frequency, which is different from the typical Smith-Purcell free-electron laser that radiates only at harmonics of the resonant frequency.

The excitation density dependence of radiation power and wave forms of the terahertz wave from InAs surface under magnetic fields was investigated. A drastic change of the wave forms was observed at high density excitation and was explained by the polarity reversal of the terahertz wave form induced by the magnetic field. The reversal originates from the crossover of the radiation mechanism of the magnetic induced component from the electrons in the accumulation layer to the diffusion current by the photogenerated electrons at high-density excitation under a magnetic field.

The excitation density dependence of the terahertz radiation from a semi-insulating InP surface was investigated in detail. By changing the excitation density, substantial changes were observed in the wave form with a reversal of the polarity of the radiation field. Different azimuthal angle dependence was also observed for low- and high-density excitations. These facts indicate that three different radiation mechanisms coexist and that the dominant radiation mechanism changes with increasing the excitation density from the drift current, for low-excitation density, to the diffusion current and the optical rectification, for high-excitation density.

We report an enhancement of terahertz radiation power from InAs surfaces excited by ultrashort laser pulses using an MgO hemispherical lens coupler. The power of the terahertz radiation from the InAs surface with the MgO lens coupler is 50 times larger than that from the InAs surface without the MgO lens coupler. The enhancement is explained mainly by the increase of the transmission efficiency of the THz wave from InAs to free space.

The photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs are demonstrated to have a useful bandwidth beyond 20 THz for a gating laser pulse width of 15 fs. The bandwidth and signal-to-noise ratio are compared with those of reference photoconductive antennas based on low-temperature grown GaAs.

The temperature dependence of THz radiation from semi-insulating GaAs surfaces excited by ultrashort laser pulses has been studied above room temperature up to 900 K. It is found that the radiation power increases with an increase in temperature and has a peak at ∼500 K, and then decreases with a further increase in temperature. The power radiated at 500 K is more than 30 times stronger than that at room temperature. The enhancement mechanism is discussed in relation to the temperature dependence of the built-in surface electric field.

We have generated and detected a longitudinally polarized (Z-polarized) terahertz (THz) wave by focusing a conically propagating THz beam generated from a plasma filament induced by a femtosecond laser pulse. In the experiment, we observed a radially polarized field in a collimated region and Z-polarized field at focus in the time domain. The maximum value of the Z-polarized THz electric field reached 1.0 kV/cm. It was also quantitatively discussed about the Z-polarized field and the radial field at the focal point. We expect this technique to find application in THz time domain spectroscopy.

We introduce a simple and efficient method of enhancing the terahertz field in an air plasma produced by two-color laser pulses, by inserting a specially designed dual-wavelength wave plate between the non-linear optical crystal and the plasma. Adjusting the polarization of the two laser pulses yielded an electric field of 1.4 MV/cm, which was 1.7 times as intense as that obtained from the unmodified system. Additionally, taking a dispersion of the group velocities of the two-color laser pulses into account, we discussed the validity of the enhancement factor.

We investigated the ultrafast terahertz response to the photoexcitation for vanadium dioxide single crystals and thin films using the optical-pump terahertz-probe technique at room temperature. The optical excitation induced an ultrafast decrease of the transmittance of the terahertz radiation within 0.7ps. Since we expect only the free carrier response in the terahertz range, the decrease of the transmittance is unambiguously assigned to the appearance of the high electronic conductivity due to free carriers. The conductivity increases more than ten times in the picosecond time range after photoexcitation and it is concluded that the electronic states are metallic.