Search

We report the realization of single photon emission from an InGaN quantum dot in a GaN inverted truncated-pyramid structure: a single photon horn. The structural parameters of the quantum dots, especially the quantum confinement in the (0001) direction, are well controlled by optimizing the planar single InGaN quantum well to be of ∼2 monolayers. Based on conventional nanoimprint pillars combining with a simple regrowth process, the single photon horn structure is realized with an efficient photon emission of 8 × 105 photons/s while still maintaining a g(2)(0) < 0.5 even at an extremely low excitation power of 35 nW (4.5 W cm−2).

In many InGaN/GaN single photon emitting structures, significant contamination of the single photon stream by background emission is observed. Here, utilizing InGaN/GaN quantum dots incorporated in mesoporous distributed Bragg reflectors (DBRs) within micropillars, we demonstrate methods for the reduction of this contamination. Using the resulting devices, autocorrelation measurements were performed using a Hanbury Brown and Twiss set-up, and thus, we report a working quantum dot device in the III-nitride system utilizing mesoporous DBRs. Uncorrected g(2)(0) autocorrelation values are shown to be significantly improved when excited with a laser at longer wavelengths and lower powers. Through this optimization, we report a g(2)(0) value from a blue-emitting InGaN/GaN quantum dot of 0.126 ± 0.003 without any form of background correction.

Microphotoluminescence studies were carried out on a single GaN nanocolumn containing a single InGaN quantum disk (QDisk) that had been removed from its growth substrate and dispersed onto a patterned grid. An analysis of the dynamics of the carriers in the nanocolumn is presented. Suppression of the GaN luminescence from the area of the column in the vicinity of the InGaN QDisk in addition to a delayed emission from the QDisk relative to the GaN is observed. Time resolved spatial maps of the luminescence intensity from the column are also presented, illustrating the evolution of the carrier density in the system. © 2011 American Institute of Physics.

ZnO nanostructures attract current interest because they have the potential to implement cavity quantum electrodynamics at room temperature. We report a photoluminescence mapping of ZnO nanobelts both at room temperature and 4.2 K. The multicavity modes were observed all over the belt surface, which were induced by Fabry-Ṕrot interference. The emission from the belt surface is enhanced at both the ends and the sides of the belt, and is highly linearly polarized in the direction perpendicular to the long axis of the belt. The results are explained using finite-difference time-domain simulations. © 2009 American Institute of Physics.

Time-integrated and time-resolved microphotoluminescence studies were carried out on Inx Ga1-x N quantum disks embedded in GaN nanocolumns grown by molecular beam epitaxy. Emission at ∼3.33 eV from confined states was detected and observed to blueshift with excitation power; a result of charge screening and the quantum confined Stark effect. Due to the reduced band bending and resulting increased overlap of the confined electron and hole wave functions, the lifetime of the emission was measured to decrease with increasing excitation power. The saturation of the blueshift and lifetime reduction follows that of the peak intensity, indicating a Stark screening process. © 2009 American Institute of Physics.

We report the demonstration of single-photon emission from cubic GaN/AlN quantum dots grown by molecular beam epitaxy. We have observed spectrally clean and isolated emission peaks from these quantum dots. Clear single-photon emission was detected by analyzing one such peak at 4 K. The estimated g(2)[0] value is 0.25, which becomes 0.05 when corrected for background and detector dark counts. We have also observed the single-photon nature of the emission up to 100 K (g(2)[0] = 0.47). These results indicate that cubic GaN quantum dots are possible candidates for high-temperature operating UV single-photon sources with the possibility of integration into photonic nanostructures.

The optical properties of site-controlled single GaN quantum dots (QDs) embedded in nanowires are presented. These properties are largely determined by a strong carrier confinement due to the small size of the dots (0.5 ∼ 1 nm in height). The QDs emit in the deep-ultraviolet region of the electromagnetic spectrum and exhibit the biexciton binding energy of 52 meV, which is the largest value ever reported in III-V semiconductor QDs. Furthermore, the dots luminesce at room-temperature and have short exciton decay times of ∼300 ps due to an increased oscillator strength. These findings indicate that these site-controlled QDs are promising for various applications in quantum information devices.