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Samples of vertically aligned carbon nanofibers (VACNFs) were viewed transverse to the growth direction and studied using both scanning and transmission electron microscopy. The VACNFs are composed of graphite layers nearly parallel to the substrate at their bottom end, gradually formed graphite “cups” in the main body, and a catalyst particle on the tip. The formation of such structure is due to the corresponding transformation of the shape of the catalyst particle during initial VACNF growth. A model for their initial growth is proposed.

We report a method to fabricate nanoscale pipes (“nanopipes”) suitable for fluidic transport. Vertically aligned carbon nanofibers grown by plasma-enhanced chemical vapor deposition are used as sacrificial templates for nanopipes with internal diameters as small as 30 nm and lengths up to several micrometers that are oriented perpendicular to the substrate. This method provides a high level of control over the nanopipe location, number, length, and diameter, permitting them to be deterministically positioned on a substrate and arranged into arrays.

We report on the fabrication and operation of integrated gated field emission devices using single vertically aligned carbon nanofiber (VACNF) cathodes where the gate aperture has been formed using a self-aligned technique based on chemical mechanical polishing. We find that this method for producing gated cathode devices easily achieves structures with gate apertures on the order of 2 μm that show good concentric alignment to the VACNF emitter. The operation of these devices was explored and field emission characteristics that fit well to the Fowler–Nordheim model of emission was demonstrated.

In this work, we examine the operation of individual field emitter cells contained in a field emitter array composed of integrally gated multiwalled carbon nanotube (MWNT)-based field emission cathodes. These devices were found to behave in a manner consistent with a multiple emission site model of Fowler–Nordheim field emission. These results show considerable variation in the operational characteristics of cells contained within the same array and indicate that data obtained from arrays of cells are not necessarily indicative of individual cell performance.

Controlled alignment of catalytically grown carbon nanofibers (CNFs) at a variable angle to the substrate during a plasma-enhanced chemical vapor deposition process is achieved. The CNF alignment is controlled by the direction of the electric field lines during the synthesis process. Off normal CNF orientations are achieved by positioning the sample in the vicinity of geometrical features of the sample holder, where bending of the electric field lines occurs. The controlled growth of kinked CNFs that consist of two parts aligned at different angles to the substrate normal also is demonstrated.

Vertically aligned carbon nanofibers (VACNFs) with vastly different spacing were grown by catalytically controlled dc glow discharge chemical vapor deposition. Both densely packed VACNFs and essentially isolated VACNFs were studied using scanning electron microscopy and x-ray energy dispersive spectroscopy. The morphology and chemical composition of isolated VACNFs were found to have a strong dependence upon the growth conditions, in particular on the C2H2/NH3 gas mixture used. This is attributed to the sidewalls of isolated VACNFs being exposed to reactive species during growth. In contrast, the sidewalls of densely packed VACNFs were shielded by the neighboring VACNFs, so that their growth occurred mainly in the vertical direction, by diffusion of carbon through the catalyst nanoparticle and subsequent precipitation at the nanofiber/nanoparticle interface. These striking differences in the growth process result in the formation of flattened carbon nanostructures (carbon nanotriangles) and also are quite...

We report on the operation of an integrated gated cathode device using a single vertically aligned carbon nanofiber as the field emission element. This device is capable of operation in a moderate vacuum for extended periods of time without experiencing a degradation of performance. Less than 1% of the total emitted current is collected by the gate electrode, indicating that the emitted electron beam is highly collimated. As a consequence, this device is ideal for applications that require well-focused electron emission from a microscale structure.

We report experimental evidence showing a direct correlation between the alignment of carbon nanofibers (CNFs) prepared by plasma-enhanced chemical-vapor deposition and the location of the catalyst particle during CNF growth. In particular, we find that CNFs that have a catalyst particle at the tip (i.e., growth proceeds from the tip) align along the electric-field lines, whereas CNFs with the particle at the base (i.e., growth proceeds from the base) grow in random orientations. We propose a model that explains the alignment process as a result of a feedback mechanism associated with a nonuniform stress (part tensile, part compressive) that is created across the interface of the catalyst particle with the CNF due to electrostatic forces. Furthermore, we propose that the alignment seen recently in some dense CNF films is due to a crowding effect and is not directly the result of electrostatic forces.

The ability to control the nanoscale shape of nanostructures in a large-scale synthesis process is an essential and elusive goal of nanotechnology research. Here, we report significant progress toward that goal. We have developed a technique that enables controlled synthesis of nanoscale carbon structures with conical and cylinder-on-cone shapes and provides the capability to dynamically change the nanostructure shape during the synthesis process. In addition, we present a phenomenological model that explains the formation of these nanostructures and provides insight into methods for precisely engineering their shape. Since the growth process we report is highly deterministic in allowing large-scale synthesis of precisely engineered nanoscale components at defined locations, our approach provides an important tool for a practical nanotechnology.

The behavior of a 50 nm Cu–Ni alloy film on Si in a process of reactive solid-state dewetting is presented. The films were annealed at a range of temperatures (300–700 °C) in 1% H2 99% N2 reducing atmosphere. The resulting alloy and silicide particles formed by film dewetting and film reaction with the substrate were distinguished by selective wet etching and examined by scanning electron microscopy and spectroscopy. After potassium hydroxide etch, regions that etch slower than silicon substrate have distribution statistics similar to the alloy and silicide particles prior to their removal, indicating strong coupling between mass transport across the interface and along the surface.

Thin nickel films were patterned into various shapes and treated with a series of laser pulses. The edges and vertices of the patterned shapes act as programable instabilities, which enable directed assembly via dewetting when the laser energy density is above the melting threshold. The pattern formations were monitored as a function of laser pulse and the retraction process was attributed liquid dewetting and a subsequent resolidification. The calculated retraction velocity (83m∕s) and liquid lifetime (12.3ns) were consistent with the measured nickel retraction distances. The vertices of the shapes had an initially larger retraction velocity which was attributed to an additional in-plane curvature.

The crystallization properties of amorphous silicon (a-Si) thin film deposited by rf magnetron sputter deposition with substrate bias have been thoroughly characterized. The crystallization kinetics for films deposited with substrate bias is enhanced relative to unbiased a-Si by films. The enhanced crystallization for substrate biased a-Si films are attributed to ion enhanced nucleation of crystallites during sputter deposition which subsequently grow during the postdeposition anneal. Conversely films sputter deposited without substrate bias have more intrinsic defects and residual oxygen which enhance nucleation and retard growth, respectively, and lead to a large number of small crystallites.

The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film.

We report on the fabrication and operation of integrated field emission cathodes containing single tungsten (W) nanofibers selectively grown by nanoscale electron beam induced deposition (EBID). A nonorganometallic precursor, WF6, was used to deposit metallic W fibers. Vacuum electrical testing reveals electrons were successfully extracted from the W nanofiber tip and were collected by a phosphor anode. Direct current versus voltage (I–V) curves exhibited Fowler–Nordheim behavior, indicating the occurrence of cold field emission. Electrical testing of these devices indicated that EBID direct-write is a promising technique for direct production or repair of field emission cathodes.