1. Nucleation of chemical vapor deposited silicon nitride on silicon dioxide
- Author
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Kyle Erik Litz, Patrick R. Varekamp, D. W. Kisker, Matthew Copel, M. M. Banaszak Holl, and Fenton R. McFeely
- Subjects
inorganic chemicals ,Physics and Astronomy (miscellaneous) ,Inorganic chemistry ,technology, industry, and agriculture ,Nanocrystalline silicon ,Nucleation ,Chemical vapor deposition ,Combustion chemical vapor deposition ,Nitride ,equipment and supplies ,complex mixtures ,chemistry.chemical_compound ,Chemical engineering ,Silicon nitride ,chemistry ,Plasma-enhanced chemical vapor deposition ,Physical vapor deposition - Abstract
We have studied the early stages of silicon nitride chemical vapor deposition (CVD) on silicon dioxide using medium energy ion scattering. The growth mode consists of island nucleation followed by coalescence. Similar behavior is observed for films grown using different precursors and reactor environments, indicating that the growth mode is caused by the fundamental nonwetting nature of the nitride/oxide interface under the conditions used for CVD.
- Published
- 1999
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