1. Role of V-pits in the performance improvement of InGaN solar cells
- Author
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Youssef El Gmili, Abdallah Ougazzaden, Paul L. Voss, Suresh Sundaram, Muhammad Arif, Xin Li, Gilles Patriarche, Jeremy Streque, Jean-Paul Salvestrini, Matthew B. Jordan, University of Gujrat, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), School of Instrumentation Science and Opto-electronics Engineering [Beijing], Beihang University (BUAA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), IMPACT N4S, ANR-15-IDEX-0004,LUE,Isite LUE(2015), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), and ANR-12-PRGE-0014,NOVAGAINS,Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium(2012)
- Subjects
Solar cells ,MATLAB ,Materials science ,Physics and Astronomy (miscellaneous) ,Electrical properties and parameters ,02 engineering and technology ,01 natural sciences ,7. Clean energy ,Quantum efficiency ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Semiconductor materials ,0103 physical sciences ,Doping ,Ultraviolet light ,Electron beam induced current ,010302 applied physics ,Nanotubes ,business.industry ,Electron beam-induced current ,Energy conversion efficiency ,Wide-bandgap semiconductor ,Short circuit ,Heterojunction ,021001 nanoscience & nanotechnology ,Optoelectronics ,0210 nano-technology ,business ,Current density - Abstract
International audience; We study the influence of V-pits on the overall conversion efficiency of bulk In0.12 Ga0.88N based heterojunction solar cells grown by MOVPE. We show that V-pits significantly enhances the extraction of the photogenerated carriers in the InGaN absorber, resulting in a peak external quantum efficiency of 79% and a short circuit current density (twice the state of the art) of 2.56 mA/cm−2 under AM 1.5G conditions.
- Published
- 2016
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