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Your search keyword '"Rao, D. V."' showing total 17 results
Start Over Author "Rao, D. V." Journal applied physics letters
17 results on '"Rao, D. V."'

13. Electron microscopy investigations of purity of AlN interlayer in AlxGa1-xN/GaN heterostructures grown by plasma assisted molecular beam epitaxy.

Author

Sridhara Rao, D. V., Jain, Anubha, Lamba, Sushil, Muraleedharan, K., and Muralidharan, R.

Subjects
*ELECTRON microscopy, *MOLECULAR dynamics, *ELECTRIC conductivity, *PHOTOSYNTHETIC oxygen evolution, *WURTZITE
Abstract

The electron microscopy was used to characterize the AlN interlayer in AlxGa1-xN/AlN/GaN heterostructures grown by plasma assisted molecular beam epitaxy (PAMBE). We show that the AlN interlayer grown by PAMBE is without gallium and oxygen incorporation and the interfaces are coherent. The AlN interlayer has the ABAB stacking of lattice planes as expected for the wurtzite phase. High purity of AlN interlayer with the ABAB stacking leads to larger conduction band offset along with stronger polarization effects. Our studies show that the origin of lower sheet resistance obtained by PAMBE is the purity of AlN interlayer. [ABSTRACT FROM AUTHOR]

Published
2013
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14. TiAlN/TiAlON/Si3N4 tandem absorber for high temperature solar selective applications.

Author

Barshilia, Harish C., Selvakumar, N., Rajam, K. S., Sridhara Rao, D. V., Muraleedharan, K., and Biswas, A.

Subjects
MAGNETRONS, NEUTRON absorbers, REFRACTIVE index, OXIDATION, ELECTRONIC equipment, PHOTOELECTRON spectroscopy
Abstract

A tandem absorber of TiAlN/TiAlON/Si3N4 is prepared using a magnetron sputtering process. The graded composition of the individual component layers of the tandem absorber produces a film with a refractive index increasing from the surface to the substrate, which exhibits a high absorptance (0.95) and a low emittance (0.07). The tandem absorber is stable in air up to 600 °C for 2 h, indicating its importance for high temperature solar selective applications. The thermal stability of the tandem absorber is attributed to high oxidation resistance and microstructural stability of the component materials at higher temperatures. [ABSTRACT FROM AUTHOR]

Published
2006
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15. Brillouin scattering in thin-film waveguides.

Author

Janaky, T. P., Prasada Rao, T. A., Narasimha Rao, D. V. G. L., and Narayanaswamy, C. K.

Subjects
BRILLOUIN scattering, THIN films, POLYSTYRENE, TOLUENE, OPTICAL waveguides
Abstract

Brillouin component is observed for the first time along the backscattered m lines in the anisotropic film waveguides. Each order of the forward as well as the backscattered m lines is found to be split into two components and are attributed to the presence of TE and TM modes. Temperature conditions under which the films are made and the thickness of the films are found to be critical. Polystyrene films are used in the investigations as waveguide materials due to their compatibility. [ABSTRACT FROM AUTHOR]

Published
1984
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