532 results on '"Razeghi, M."'
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2. Phase-locked, high power, mid-infrared quantum cascade laser arrays
3. Shortwave quantum cascade laser frequency comb for multi-heterodyne spectroscopy
4. Room temperature operation of InxGa1−xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD
5. Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier
6. Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices
7. High power continuous operation of a widely tunable quantum cascade laser with an integrated amplifier
8. Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition.
9. High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1−xSbx superlattices
10. High brightness angled cavity quantum cascade lasers
11. High power frequency comb based on mid-infrared quantum cascade laser at λ ∼ 9 μm
12. Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices
13. Widely tunable room temperature semiconductor terahertz source
14. InAs/InAs1−xSbx type-II superlattices for high performance long wavelength infrared detection
15. High power operation of λ ∼ 5.2–11 μm strain balanced quantum cascade lasers based on the same material composition
16. High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
17. Continuous operation of a monolithic semiconductor terahertz source at room temperature
18. Evaluating the size-dependent quantum efficiency loss in a SiO2-Y2O3 hybrid gated type-II InAs/GaSb long-infrared photodetector array
19. Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice
20. Extended electrical tuning of quantum cascade lasers with digital concatenated gratings
21. Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array
22. AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%
23. AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
24. Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement
25. Room temperature terahertz quantum cascade laser sources with 215 μW output power through epilayer-down mounting
26. Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy
27. Demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices
28. Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)
29. Widely tuned room temperature terahertz quantum cascade laser sources based on difference-frequency generation
30. Room temperature continuous wave operation of λ ∼ 3–3.2 μm quantum cascade lasers
31. Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors
32. Angled cavity broad area quantum cascade lasers
33. Sampled grating, distributed feedback quantum cascade lasers with broad tunability and continuous operation at room temperature
34. Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices
35. High power, continuous wave, room temperature operation of λ ∼ 3.4 μm and λ ∼ 3.55 μm InP-based quantum cascade lasers
36. High power, continuous wave, quantum cascade ring laser
37. Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors
38. Room temperature single-mode terahertz sources based on intracavity difference-frequency generation in quantum cascade lasers
39. Effect of contact doping in superlattice-based minority carrier unipolar detectors
40. Room temperature quantum cascade lasers with 27% wall plug efficiency
41. 2.4 W room temperature continuous wave operation of distributed feedback quantum cascade lasers
42. Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes
43. High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices
44. Highly temperature insensitive quantum cascade lasers
45. Room-temperature continuous wave operation of distributed feedback quantum cascade lasers with watt-level power output
46. Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes
47. Broad area photonic crystal distributed feedback quantum cascade lasers emitting 34 W at λ∼4.36 μm
48. Watt level performance of quantum cascade lasers in room temperature continuous wave operation at λ∼3.76 μm
49. Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices
50. Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
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