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We analyze the magnetic design for different generations of perpendicular magnetic recording (PMR) media using resonant soft x-ray small angle x-ray scattering. This technique allows us to simultaneously extract in a single experiment the key structural and magnetic parameters, i.e., lateral structural grain and magnetic cluster sizes as well as their distributions. We find that earlier PMR media generations relied on an initial reduction in the magnetic cluster size down to the grain level of the high anisotropy granular base layer, while very recent media designs introduce more exchange decoupling also within the softer laterally continuous cap layer. We highlight that this recent development allows optimizing magnetic cluster size and magnetic cluster size distribution within the composite media system for maximum achievable area density, while keeping the structural grain size roughly constant.

Model exchange coupled composite media, namely [Co/Pd]5/Pd(t)/[Co/Ni]3/Co multilayers, deposited onto prepatterned substrates have been investigated for potential use in bit patterned recording. Optimizing the thickness of the Pd interlayer allows decreasing the switching field (HC) and switching field distribution (σSFD) while maintaining thermal stability. The dependence of the remanent coercivity on the external field angle indicates that the gain in HC and σSFD originates from the incoherent magnetization reversal introduced by slightly decoupling the hard and soft multilayer stacks. This tendency is confirmed by further reductions in HC and σSFD, when inserting another Pd interlayer within the hard [Co/Pd]5 stack.

We present a study of the magnetic reversal mechanism for exchange coupled composite perpendicular media, i.e., hard granular layer/exchange-coupling layer (ECL)/soft layer (SL) systems, without soft underlayer. Using a vibrating sample magnetometer, the out-of-plane and in-plane components of the magnetization are monitored simultaneously, while sweeping an external out-of-plane magnetic field. The in-plane signal reveals the reversible rotation of the magnetization during the switching process. The amplitude of this rotation is correlated with the variations in coercivity and angular dependence of the remanent coercivity for different ECL and SL thicknesses.

International audience; We demonstrate a measurement technique with zero-applied magnetic field to deduce and spatially map the activation energy barrier distribution of strongly exchange-coupled magnetic-multilayer thin films, which is otherwise inaccessible with conventional methods in the presence of an applied magnetic field. Our technique involves the analysis of magnetic force microscopy images of magnetic microwires, whose magnetizations have been subject to thermal decay due to Joule heating from applied nanosecond scale current pulses. Fitting the results of such measurements on CoNi/Pd magnetic-multilayer microwires to a modified Arrhenius–Neel formalism yields an energy barrier distribution with 8% sigma, in good agreement with complementary fits of the switching-field-distribution measurements on patterned CoNi/Pd magnetic-multilayer islands. In order to achieve reliable operation of nanoscale magnetic devices, it is paramount to understand the role of spatial inhomogeneity of intrinsic magnetic properties, such as mag-netization, exchange, anisotropy, and activation energy for reversal in the overall performance of these devices. This evaluation is also necessary to separately diagnose the complementary contributions to the element-to-element performance variations from extrinsic ͑i.e., patterning induced͒ factors, such as ion-mill edge damage 1 and sidewall oxidation effects. 2

In low resistance-area product MgO magnetic tunnel junction nanopillars, we observe high integrated power (up to 43nW), narrow linewidth (down to 10MHz), spin transfer induced microwave emission at frequencies up to 14GHz due to precession of the free layer magnetization at room temperature. Although all devices were fabricated on the same wafer, they present bimodal transport and precessional characteristics. The devices in which the narrowest linewidths were observed exhibited low resistance and tunneling magnetoresistance (30%), while maintaining large integrated power.