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Your search keyword '"Scalese, S"' showing total 7 results
Start Over Author "Scalese, S" Journal applied physics letters
7 results on '"Scalese, S"'

6. Experimental determination of the local geometry around In and In–C complexes in Si.

Author

d'Acapito, F., Shimizu, Y., Scalese, S., Italia, M., Alippi, P., and Grasso, S.

Subjects
SILICON, ELECTRONIC equipment, SEMICONDUCTOR doping, SEMICONDUCTOR defects, ELECTRIC conductivity
Abstract

The electrical properties of dopants in Si are of primary importance for the realization of electronic devices. Indium represents a promising p-type dopant whose electrical properties are improved by codoping with C. From theoretical studies In and C are expected to pair in the Si matrix in order to lower the strain energy. In this contribution we provide the first direct experimental determination of the sites of In and In–C complexes in Si. [ABSTRACT FROM AUTHOR]

Published
2006
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7. Substitutional carbon incorporation in epitaxial Si[sub 1-y]C[sub y] alloys on Si(001) grown by...

Author

Osten, H.J., Griesche, J., and Scalese, S.

Subjects
CARBON, CHEMICAL kinetics, SUBSTITUTION (Technology)
Abstract

Shows that carbon incorporation kinetics depend on the carbon concentration. Influence of growth conditions on carbon substitutionality; Description of the carbon behavior using a kinetics model; Incorporation of very low carbon concentrations substitutionally; Upper limit for substitutional incorporation.

Published
1999
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