1. High-temperature electronic devices enabled by hBN-encapsulated graphene
- Author
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Makars Šiškins, Takashi Taniguchi, Davit Ghazaryan, Jun Yin, Seok-Kyun Son, Kostya S. Novoselov, Kenji Watanabe, Ciaran Mullan, and Artem Mishchenko
- Subjects
010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Graphene ,Wide-bandgap semiconductor ,Hexagonal boron nitride ,02 engineering and technology ,Atmospheric temperature range ,021001 nanoscience & nanotechnology ,01 natural sciences ,7. Clean energy ,law.invention ,Atmosphere of Venus ,National Graphene Institute ,law ,Electrical resistivity and conductivity ,ResearchInstitutes_Networks_Beacons/national_graphene_institute ,0103 physical sciences ,Thermal ,Optoelectronics ,Electronics ,0210 nano-technology ,business - Abstract
Numerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).
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