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High-performance p-B-n infrared photodetectors based on In 0.53 Ga 0.47 As / Ga 0.51 As 0.49 Sb type-II superlattices with an Al 0.85 Ga 0.15 AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of ∼ 2.1 μm and ∼ 2.6 μm, respectively. At a bias voltage of −100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 μm, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 4.12 × 10 10 cm · Hz 1 / 2 / W (at a peak responsivity of 2.1 μm) under −100 mV applied bias at 300 K. [ABSTRACT FROM AUTHOR]

This paper details the fabrication of GaN-based microdisks with a single porous n-GaN layer positioned beneath the multiple quantum wells region on a modified green light-emitting diode epiwafer. Simulations of the longitudinal light field distribution reveal effective confinement of the light field within the multiple quantum wells region due to the presence of the single porous layer. The porous layer also demonstrates sufficient conductivity as determined through calculations and serves as an effective method for thermal dispersion. Under optical pumping, all microdisks exhibit clear whispering gallery mode (WGM) lasing at room temperature, with the lowest threshold of 13.50 μJ/cm2 achieved in a 2-μm-diameter microdisk. These findings suggest that integrating the single porous layer into GaN microdisks is a highly promising approach for achieving high-efficiency WGM micro-laser diodes with effective electrical injection and heat dispersion. [ABSTRACT FROM AUTHOR]

The field-effect transistors (FETs) using 2D materials as channel materials have received great attention in the future development of integrated circuits, where the selection of gate dielectrics with better interface and gate control capabilities has become a focal research area. In this work, we applied a large-scale CaF2 film as the top gate dielectric of the FETs, which achieved a subthreshold swing of 90 mV/dec, an on/off ratio of 106, and a transfer curve hysteresis window below 10 mV. Additionally, large-sized array devices were fabricated, which exhibited stable electrical performance. Theoretical calculations have shown the formation of a quasi-van der Waals interface without bonding between CaF2 and the channel, which is consistent with the results observed using transmission electron microscopy. Our work represents significant technological advances in the development of 2D FETs, holding profound implications for the future design and fabrication of low-power electronic devices. [ABSTRACT FROM AUTHOR]

In this study, we employ a machine-learning potential approach based on first-principles calculations combined with the Boltzmann transport theory to investigate the impact of lithium-ion de-embedding on the thermal conductivity of LiFePO4, with the aim of enhancing heat dissipation in lithium-ion batteries. The findings reveal a significant decrease in thermal conductivity with increasing lithium-ion concentration due to the decrease in phonon lifetime. Moreover, removal of lithium ions from different sites at a given lithium-ion concentration leads to distinct thermal conductivities, attributed to varying anharmonicity arising from differences in bond lengths and bond strengths of the Fe-O bonds. Our work contributes to a fundamental understanding of the thermal transport properties of lithium iron phosphate batteries, emphasizing the pivotal role of lithium-ion detachment and intercalation in the thermal management of electrochemical energy storage devices. [ABSTRACT FROM AUTHOR]

In this study, we employ a machine-learning potential approach based on first-principles calculations combined with the Boltzmann transport theory to investigate the impact of lithium-ion de-embedding on the thermal conductivity of LiFePO4, with the aim of enhancing heat dissipation in lithium-ion batteries. The findings reveal a significant decrease in thermal conductivity with increasing lithium-ion concentration due to the decrease in phonon lifetime. Moreover, removal of lithium ions from different sites at a given lithium-ion concentration leads to distinct thermal conductivities, attributed to varying anharmonicity arising from differences in bond lengths and bond strengths of the Fe-O bonds. Our work contributes to a fundamental understanding of the thermal transport properties of lithium iron phosphate batteries, emphasizing the pivotal role of lithium-ion detachment and intercalation in the thermal management of electrochemical energy storage devices. [ABSTRACT FROM AUTHOR]

The layered solid electrolyte Li2ZrCl6 and Li metal electrodes have a very good contact stability, but the thermal transport properties of Li2ZrCl6 are still unclear. Here, we systematically study the intrinsic lattice thermal conductivity (κp) of Li2ZrCl6 using the machine-learning potential approach based on first-principles calculations combined with the Boltzmann transport theory. The results show that the κp of Li2ZrCl6 at room temperature is 3.94 W/mK along the in-plane (IP) direction and 1.05 W/mK along the out-plane (OP) direction, which means that the κp is significantly anisotropic. In addition, under the compressive stress in the OP direction, the κp evolution along the IP and OP directions exhibits completely different trends, because the stress has a significant regulatory effect on the contribution of optical phonons to κp. With the increase in stress, the κp in the IP direction monotonically decreases, while the κp in the OP direction increases by a factor of 2.2 under a compressive strain of 13%. This is because the contribution of low-frequency optical phonons to κp in the IP direction is as high as 58% when no stress is applied, and this contribution is significantly suppressed with increasing compressive strain. However, the contribution of optical phonons in the OP direction to the κp increases with the increase in stress. Our results reveal the thermal transport properties of Li2ZrCl6 and the effect of the compressive strain on the κp of Li2ZrCl6, thereby providing a reference for the use of Li2ZrCl6 in Li-metal batteries. [ABSTRACT FROM AUTHOR]

The charge injection mechanism from contact electrodes into two-dimensional (2D) dichalcogenides is an essential topic for exploiting electronics based on 2D channels, but remains not well understood. Here, low-work function metal ytterbium (Yb) was employed as contacts for tungsten disulfide (WS2) to understand the realistic injection mechanism. The contact properties in WS2 with variable temperature (T) and channel thickness (tch) were synergetically characterized. It is found that the Yb/WS2 interfaces exhibit a strong pinning effect between energy levels and a low contact resistance (RC) value down to 5 kΩ μm. Cryogenic electrical measurements reveal that RC exhibits weakly positive dependence on T until 77 K as well as a weakly negative correlation with tch. In contrast to the non-negligible RC values extracted, an unexpectedly low effective thermal injection barrier of 36 meV is estimated, indicating the presence of significant tunneling injection in the subthreshold regime and the inapplicability of the pure thermionic emission model to estimate the height of the injection barrier. [ABSTRACT FROM AUTHOR]

Bi2O2Se is emerging as a high mobility functional material for optoelectronics, but its fundamental optical properties remain less well studied. Here, ultrafast photocarrier dynamics in single crystal Bi2O2Se is investigated by pump fluence-dependent, broadband ultrafast spectroscopy. Our results reveal that bimolecular recombination plays an important role in the photocarrier relaxation process, and a room-temperature bimolecular recombination constant of (1.29 ± 0.42) × 10−9 cm−3 s−1 is obtained for Bi2O2Se. Such a level of the recombination constant combined with a high mobility (∼1006 cm2 V−1 s−1 at 200 K for Bi2O2Se) suggests that Bi2O2Se can be a promising material for photovoltaic applications. [ABSTRACT FROM AUTHOR]

WTe2 is a unique material in the family of transition metal dichalcogenides and it has been proposed as a candidate for type-II Weyl semimetals. However, thus far, studies on the optical properties of this emerging material have been significantly hindered by the lack of large-area, high-quality WTe2 materials. Here, we grow a centimeter-scale, highly crystalline WTe2 ultrathin film (∼35 nm) by a pulsed laser deposition technique. Broadband pump-probe spectroscopy (1.2–2.5 μm) reveals a peculiar ultrafast optical response where an initial photo-bleaching signal (lasting ∼3 ps) is followed by a long-lived photoinduced absorption signature. Nonlinear absorption characterization using femtosecond pulses confirms the saturable absorption response of the WTe2 ultrathin films, and we further demonstrated a mode-locked Thulium fiber laser using a WTe2 absorber. Our work provides important insights into linear and nonlinear optical responses of WTe2 thin films. [ABSTRACT FROM AUTHOR]