Search

We report 2.8 μm emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 × 106 cm-2. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 μm with a narrow linewidth (∼50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP. [ABSTRACT FROM AUTHOR]

We demonstrate the growth and luminescence of coherently strained In0.5Ga0.5As self-assembled quantum dots on GaP. Cross-sectional and planar-view transmission electron microscopy confirmed the dislocation-free nature of the In0.5Ga0.5As quantum dots and GaP cap layers. Intense photoluminescence from the quantum dots was measured at 80 K and was visible to the unaided eye in ambient lighting. The photoluminescence results show that emission energy can be controlled by varying the In0.5Ga0.5As deposition thickness. In combination with recent advances in the growth of GaP on Si, the In0.5Ga0.5As quantum dots demonstrated here could enable monolithic optoelectronic integration on Si. [ABSTRACT FROM AUTHOR]