1. Terahertz electroluminescence from Be δ-doped GaAs/AlAs quantum well
- Author
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Wei Yan Cong, Ning Ning Chu, Ying Xin Song, Jing Liu, Ai Ling Wu, Wei-Min Zheng, and Su Mei Li
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Condensed matter physics ,Condensed Matter::Other ,Terahertz radiation ,business.industry ,Doping ,Resonant-tunneling diode ,Physics::Optics ,Electroluminescence ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Gallium arsenide ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,Full width at half maximum ,chemistry ,Optoelectronics ,business ,Quantum well ,Common emitter - Abstract
A Be δ-doped GaAs/AlAs three quantum wells emitter in the terahertz range is fabricated and electroluminescence is investigated. An electroluminescence peak centered at 23.4 meV with a full width at half maximum of 4.2 meV is observed under a bias of 2 V at low temperature (T=4.5 K). The emission peak is attributed to the 2p to 1s internal transitions of the Be acceptors in the center of δ-doped GaAs quantum well. The current-voltage characteristics of the device measured at different temperatures demonstrate a strong negative differential resistance and temperature dependence.
- Published
- 2010
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