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Your search keyword '"Yang, Po"' showing total 18 results
Start Over Author "Yang, Po" Journal applied physics letters
18 results on '"Yang, Po"'

3. Atomic scale depletion region at one dimensional MoSe2-WSe2 heterointerface.

Author

Chu, Yu-Hsun, Wang, Li-Hong, Lee, Shin-Ye, Chen, Hou-Ju, Yang, Po-Ya, Butler, Christopher J., Lu, Li-Syuan, Yeh, Han, Chang, Wen-Hao, and Lin, Minn-Tsong

Subjects
HETEROJUNCTIONS, TRANSITION metals, ELECTRONIC structure, ELECTRIC fields, SCANNING tunneling microscopy
Abstract

Lateral heterojunctions based on two dimensional (2D) transition metal dichalcogenides (TMDCs) potentially realize monolayer devices exploiting 2D electronic structures and the functions introduced by the presence of 1D heterointerfaces. Electronic structures of a lateral MoSe2-WSe2 junction have been unveiled using scanning tunneling microscopy and spectroscopy. A smooth and narrow depletion region exists despite a defect-rich heterointerface deviating from the preferred zigzag orientations of the TMDC lattice. From the characteristics of the depletion region, a high carrier concentration and high internal electric fields are inferred, offering to benefit designs of lateral TMDC devices. [ABSTRACT FROM AUTHOR]

Published
2018
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16. Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization.

Author

Tsai, Chih-Tsung, Chang, Ting-Chang, Liu, Po-Tsun, Yang, Po-Yu, Kuo, Yu-Chieh, Kin, Kon-Tsu, Chang, Pei-Lin, and Huang, Fon-Shan

Subjects
HAFNIUM oxide, LOW temperatures, TRANSMISSION electron microscopy, SPUTTERING (Physics), THIN films
Abstract

A low-temperature method, supercritical CO2 fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO2) film at 150 °C without significant formation of parasitic oxide at the interface between HfO2 and Si substrate. In this research, the HfO2 films were deposited by dc sputter at room temperature and post-treated by SCF which is mixed with 5 vol % propyl alcohol and 5 vol % H2O. From high-resolution transmission electron microscopy image, the interfacial oxide of SCF-treated HfO2 film is only 5 Å thick. Additionally, the enhancements in the qualities of sputter-deposited HfO2 film after SCF process are exhibited by x-ray photoelectron spectroscopy and capacitance-voltage (C-V) measurement. [ABSTRACT FROM AUTHOR]

Published
2007
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17. Effects of supercritical CO2 fluid on sputter-deposited hafnium oxide.

Author

Liu, Po-Tsun, Tsai, Chih-Tsung, and Yang, Po-Yu

Subjects
SUPERCRITICAL fluids, FOURIER transforms, HAFNIUM oxide, THERMAL desorption, SURFACE chemistry
Abstract

Low-temperature supercritical fluid (SCF) technology is employed to improve the dielectric characteristics of metal oxide film deposited at low temperature. In this investigation, hafnium oxide (HfO2) film was sputter deposited at room temperature and post-treated with SCF at 150 °C, replacing typical high-temperature annealing process. From Fourier transformation infrared and thermal desorption spectroscopy measurement, the absorption peaks of Hf–O–Hf bonding and the oxygen content in HfO2 film have, respectively, shown apparent raise. The leakage current density of the low-temperature deposited HfO2 film is reduced significantly, and the conduction mechanism is modified from trap-assisted quantum tunneling to thermionic emission process, since SCF treatment effectively reduces the number of traps in HfO2 film. [ABSTRACT FROM AUTHOR]

Published
2007
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18. Internal structure of tunable ternary CdSexS1-x quantum dots unraveled by x-ray absorption spectroscopy.

Author

Chen, Liang-Yih, Yang, Po-An, Tseng, Chia-Hong, Hwang, Bing-Joe, and Chen, Ching-Hsiang

Subjects
*QUANTUM dots, *SPECTRUM analysis, *SELENIUM, *SULFUR, *CADMIUM, *BAND gaps, *ENERGY levels (Quantum mechanics), *QUANTUM theory
Abstract

CdSexS1-x quantum dots (QDs) were synthesized by a simple one-injection non-coordinate solvent method. The composition distribution of Se and S and the internal structures of the CdSexS1-x QDs can be tuned by the Se/S molar ratio. To investigate the internal structure of CdSexS1-x QD, x-ray absorption spectroscopy was used to examine the distribution of Se and S inside CdSexS1-x QDs. [ABSTRACT FROM AUTHOR]

Published
2012
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