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Mixed-dimensional van der Waals (vdW) heterostructures, integrated two-dimensional (2D) atomic crystals with three-dimensional (3D) functional materials, offer a powerful means to manipulating physical properties and generating unprecedented functionalities. Understanding interfacial couplings at those hetero (homo)-interfaces is indispensable for exploring new optical and electronic devices. Herein, we investigated dynamically phase-transition-driven strain coupling across a vdW heterointerface through integrating 2D layered 2H-MoS2 nanoflakes onto 3D phase-change VO2 epitaxial thin films. The Raman peak positions of the in-plane and out-of-plane vibration modes E 2 g 1 and A1g from the 2H-MoS2 nanoflakes show a phonon softening and reversible hysteresis loop as a function of temperature in this mixed-dimensional vdW 2H-MoS2/( 1 ¯ 11)-VO2/(1 1 ¯ 02)-Al2O3 heterostructure, originating from the co-action of temperature-dependent anharmonicity in 2H-MoS2 and reversible structural phase transition (SPT)-induced in-plane tensile strain from the VO2 thin film. Accordingly, the integrated Raman scattering intensity of these two feature peaks of the 2H-MoS2 nanoflakes increased (decreased) as the temperature increased (decreased), exhibiting a hysteresis loop in the SPT and metal–insulator transition region of VO2. Additionally, the peak integrated intensity enhancement ratio of the E 2 g 1 and A1g vibration modes was approximately 2.3 and 2.8, respectively. These results indicate that the dynamically SPT-driven in-plane tensile strain from the bottom VO2 layer interfacially couples with the adjacent 2H-MoS2 nanoflakes and results in a reduction in the electronic transition energy, leading to an enhancement in the Raman scattering intensity of 2H-MoS2. Our work holds promise for dynamic strain control of lattice dynamics and electron–phonon interaction of 2D materials for functional electronic and photoelectronic devices. [ABSTRACT FROM AUTHOR]

While In3Rh has been predicted to be a three-dimensional Dirac semimetal, experimental studies of its physical properties are lacking. Here, we report the angular-dependent magnetoresistance (MR) measurements of In3Rh single crystals under high magnetic fields up to 32 T. The crystals show large, non-saturating linear MR, and remarkable quantum oscillations with multi-frequencies. Analysis of the quantum oscillations reveals that there are three bands hosting a nontrivial Berry phase, which is corroborated by first-principles calculations. Our work may provide a platform for exploring topological materials in indium-rich transition metal compounds. [ABSTRACT FROM AUTHOR]

Interfacial charge and strain distributions inside artificial perovskite ABO3 heterostructures often affect intriguing physical properties that are important to device performance. Normally, both charge and strain coexist across the interfaces, and their exact roles in determining the properties remain elusive. In the present work, La0.7Sr0.3MnO3 (LSMO) ultrathin films were grown on (001)-0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMNPT) single-crystal substrates to discriminate between the effect of charge and strain on the transport and magnetoelectric properties. In heterostructures with thicker LSMO films, the strain effect dominates the resistance and the magnetic moment depends on the external electric field. With the decreasing LSMO thickness, the butterfly-like resistance–electric-field (R-E) and magnetization–electric-field (M-E) curves become loop-like, indicating that charge effects dominate strain effects in determining the electric field that controls the transport and magnetic properties. Furthermore, soft-x-ray absorption spectra of 32 and 4 nm LSMO/PMNPT samples at the Mn L edge under an applied electric field of ±6 kV/cm indicate that orbital reconstruction also plays an important role in interfacial magnetoelectric coupling. [ABSTRACT FROM AUTHOR]

Electric-field control of the anomalous Hall effect (AHE) was investigated in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 (FePt/PMN-PT) multiferroic heterostructures at room temperature. It was observed that a very large Hall resistivity change of up to 23.9% was produced using electric fields under a magnetic field bias of 100 Oe. A pulsed electric field sequence was used to generate nonvolatile strain to manipulate the Hall resistivity. Two corresponding nonvolatile states with distinct Hall resistivities were achieved after the electric fields were removed, thus enabling the encoding of binary information for memory applications. These results demonstrate that the Hall resistivity can be reversibly switched in a nonvolatile manner using programmable electric fields. Two remanent magnetic states that were created by electric-field-induced piezo-strain from the PMN-PT were attributed to the nonvolatile and reversible properties of the AHE. This work suggests that a low-energy-consumption-based approach can be used to create nonvolatile resistance states for spintronic devices based on electric-field control of the AHE. [ABSTRACT FROM AUTHOR]