Diemer, Peter J., Lamport, Zachary A., Yaochuan Mei, Ward, Jeremy W., Goetz, Katelyn P., Wei Li, Payne, Marcia M., Guthold, Martin, Anthony, John E., and Jurchescu, Oana D.
he electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm² V-1 s-1 to 1.5 ± 0.70 cm² V-1 s-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance. [ABSTRACT FROM AUTHOR]