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Presents data demonstrating laser diode with two parallel linear arrays of small coupled rectangular cavities delineated by oxidation of the high gap. Fabrication of laser diode array; Operation of the laser depending on the bias position; Optimization of the geometry, size, and number of the minicavities and coupling.

Presents native-oxide coupled-cavity Al[sub x-1]As-GaAs quantum well heterostructure laser diodes. Confinement of the injected carriers and optical field within the cavities by the native oxide; Longitudinal mode spectra of the internal coupled cavities.

Shows that the native oxide that can be formed on high aluminum composition Al[sub x]Ga[1-x]As confining layers on superlattices or quantum well heterostructures serves as an effective mass against impurity diffusion, and thus against impurity-induced layer disordering. Water vapor oxidation in a nitrogen carrier gas.

Presents data on the continuous-wave room-temperature operation of multiple stripe Al[sub x]Ga[sub 1-x]As-GaAs quantum well heterostructure (QWH) laser arrays defined with native oxide contact masking. QWH crystal after oxidation; Fabrication of high-performance devices without depositing foreign oxide or dielectric layers.

Data are presented on the conversion (selective conversion) of high-composition (AlAs)x(GaAs)1-x layers, e.g., in AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices (SLs), into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C). Hydrolyzation oxidation of a fine-scale AlAs(LB)-GaAs(Lz) SL (LB +Lz≲100 Å), or random alloy AlxGa1-xAs (x>=0.7), is observed to proceed more slowly and uniformly than a coarse-scale ‘‘alloy’’ such as an AlAs-GaAs superlattice with LB + Lz>=200 Å. [ABSTRACT FROM AUTHOR]