1. Valence band offset of MgO∕InN heterojunction measured by x-ray photoelectron spectroscopy
- Author
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Q. S. Zhu, S. Y. Yang, X. L. Liu, Zg G. Wang, H. B. Fan, Rq Q. Zhang, H. P. Song, P. F. Zhang, Cm M. Jiao, and H.Y. Wei
- Subjects
Valence (chemistry) ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Band gap ,Wide-bandgap semiconductor ,Optoelectronics ,Direct and indirect band gaps ,Heterojunction ,Electron hole ,business ,Band offset ,Semimetal - Abstract
MgO may be a promising gate dielectric and surface passivation film for InN based devices and the valence band offset of MgO/InN heterojunction has been measured by x-ray photoelectron spectroscopy. The valence band offset is determined to be 1.59 +/- 0.23 eV. Given the experimental band gap of 7.83 for the MgO, a type-I heterojunction with a conduction band offset of 5.54 +/- 0.23 eV is found. The accurate determination of the valence and conduction band offsets is important for use of MgO/InN electronic devices. (c) 2008 American Institute of Physics.
- Published
- 2008
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