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1. Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy.

Author

Zhang, Riqing, Zhang, Panfeng, Kang, Tingting, Fan, Haibo, Liu, Xianglin, Yang, Shaoyan, Wei, Hongyuan, Zhu, Qinsheng, and Wang, Zhanguo

Subjects
*WURTZITE, *HETEROJUNCTIONS, *PHOTOELECTRON spectroscopy, *CONDUCTION bands, *NITRIDES
Abstract

The valence band offset (VBO) of the wurtzite InN/ZnO heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.82±0.23 eV. The conduction band offset is deduced from the known VBO value to be 1.85∓0.23 eV, which indicates a type-I band alignment for InN/ZnO heterojunction. [ABSTRACT FROM AUTHOR]

Published
2007
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