138 results on '"Zhao, Q."'
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2. Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
3. High-throughput, sheathless, magnetophoretic separation of magnetic and non-magnetic particles with a groove-based channel
4. Unipolar behavior of asymmetrically doped strained Si0.5Ge0.5 tunneling field-effect transistors
5. Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy
6. Size dependent carrier recombination in ZnO nanocrystals
7. Enhanced dielectric constant and fatigue-resistance of PbZr0.4Ti0.6O3 capacitor with magnetic intermetallic FePt top electrode
8. Pressure effects on multiferroic LuFe2O4
9. Measurement of effective electron mass in biaxial tensile strained silicon on insulator
10. Ferromagnetic Sc-doped AlN sixfold-symmetrical hierarchical nanostructures
11. Fabrication of Cu2O/TiO2 nanotube heterojunction arrays and investigation of its photoelectrochemical behavior
12. The effect of layer absorbance for complex surface enhanced Raman scattering substrates
13. The role of the nanospine in the nanocomb arrays for surface enhanced Raman scattering
14. Revisiting the separation dependent surface enhanced Raman scattering
15. Interference between two coherently driven monochromatic terahertz sources
16. Barrier performance of ultrathin Ni–Ti film for integrating ferroelectric capacitors on Si
17. Enhancement of optical absorption and photocurrent of 6H-SiC by laser surface nanostructuring
18. Mn-doped AlN nanowires with room temperature ferromagnetic ordering
19. Identification of oxygen and zinc vacancy optical signals in ZnO
20. Ultraviolet driven negative current and rectifier effect in self-assembled green fluorescent protein device
21. Controlling poly(p-phenylene vinylene)/poly(vinyl pyrrolidone) composite nanofibers in different morphologies by electrospinning
22. Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy
23. Enhanced field emission from ZnO nanorods via thermal annealing in oxygen
24. Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation
25. Deep-level emissions influenced by O and Zn implantations in ZnO
26. High-quality GaNAs∕GaAs quantum wells with light emission up to 1.44μm grown by molecular-beam epitaxy
27. Morphological effects on the field emission of ZnO nanorod arrays
28. Strong 1.3–1.6μm light emission from metamorphic InGaAs quantum wells on GaAs
29. Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in GaNAs∕GaAs quantum well structures
30. Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation
31. Field-emission from long SnO2 nanobelt arrays
32. Field emission from AlN nanoneedle arrays
33. Full silicidation process for making CoSi2 on SiO2
34. Diffraction pattern and optical activity of complex fluids under external electric field
35. Enhancement of room-temperature photoluminescence in InAs quantum dots
36. Efficient field emission from ZnO nanoneedle arrays
37. Optical recombination of ZnO nanowires grown on sapphire and Si substrates
38. Green-light-emitting ZnSe nanowires fabricated via vapor phase growth
39. Large ground-to-first-excited-state transition energy separation for InAs quantum dots emitting at 1.3 μm
40. Response to “Comment on ‘Reversible phase transition between amorphous and crystalline in Zr41.2Ti13.8Cu12.5Ni10Be22.5 under high pressure at room temperature’ ” [Appl. Phys. Lett. 80, 3015 (2002)]
41. Fabrication of epitaxial CoSi2 nanowires
42. Reversible phase transition between amorphous and crystalline in Zr41.2Ti13.8Cu12.5Ni10Be22.5 under high pressure at room temperature
43. Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells
44. Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors
45. Photoluminescence of pseudomorphic SiGe formed by 74Ge+ ion implantation in the overlayer of silicon-on-insulator material
46. Deactivation of Be acceptors by atomic hydrogen in AlGaAs/GaAs quantum well structures
47. Electron and hole g‐factors in CdTe/CdMgTe quantum wells
48. Infrared absorption frequencies and oscillator strengths of acceptors confined in GaAs/AlGaAs quantum wells
49. Strain effects on the intervalence‐subband normal‐incidence absorption in ap‐type InGaAs/InP quantum well
50. Capture and recombination of acceptor bound excitons in the transition region from a two‐dimensional to a quasi‐three‐dimensional GaAs/AlGaAs system
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