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Your search keyword '"Zhao, Qing-Tai"' showing total 5 results
Start Over Author "Zhao, Qing-Tai" Journal applied physics letters
5 results on '"Zhao, Qing-Tai"'

1. Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

Author

Liu, Linjie, primary, Jin, Lei, additional, Knoll, Lars, additional, Wirths, Stephan, additional, Nichau, Alexander, additional, Buca, Dan, additional, Mussler, Gregor, additional, Holländer, Bernhard, additional, Xu, Dawei, additional, Feng Di, Zeng, additional, Zhang, Miao, additional, Zhao, Qing-Tai, additional, and Mantl, Siegfried, additional

Published
2013
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3. Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1-xGex layers.

Author

Liu, Linjie, Jin, Lei, Knoll, Lars, Wirths, Stephan, Nichau, Alexander, Buca, Dan, Mussler, Gregor, Holländer, Bernhard, Xu, Dawei, Feng Di, Zeng, Zhang, Miao, Zhao, Qing-Tai, and Mantl, Siegfried

Subjects
SILICIDES, METAL oxide semiconductor field-effect transistors, SOLAR cells, CHEMICAL vapor deposition, TRANSMISSION electron microscopy
Abstract

We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers on compressively strained Si1-xGex substrates and their structural characteristics. The uniform Ni(Al) germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 °C with an optimized Al atomic content of 20 at. %. We find only two kinds of grains in the layer. Both grains show orthogonal relationship with modified B8 type phase. The growth plane is identified to be {10-10}-type plane. After germanosilicidation the strain in the rest Si1-xGex layer is conserved, which provides a great advantage for device application. [ABSTRACT FROM AUTHOR]

Published
2013
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