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Start Over Author "Zheng, Yulin" Journal applied physics letters
4 results on '"Zheng, Yulin"'

3. Large-scale m-GeS2 grown on GaN for self-powered ultrafast UV photodetection.

Author

Chen, Sheng, Cao, Ben, Wang, Wenliang, Tang, Xin, Zheng, Yulin, Chai, Jixing, Kong, Deqi, Chen, Liang, Zhang, Shuai, and Li, Guoqiang

Subjects
WIDE gap semiconductors, GALLIUM nitride, INTERSTELLAR communication, VISIBLE spectra, NITRIDES
Abstract

Ultraviolet (UV) photodetection has been of great importance in the fields of aerospace, space communications, and remotely sensed images. However, conventional UV photodetectors (PDs) have been facing intrinsic drawbacks of complicate structural issues and interference from ambient visible light. Therefore, wide bandgap semiconductors have attracted significant attention. Herein, self-powered PDs based on the monolithic germanium disulfide (m-GeS2)/gallium nitride (GaN) pn heterojunction have been proposed with a large-size m-GeS2 over 2 cm2. The electronic and optical properties of the m-GeS2/GaN heterojunction are investigated via experiments and first-principles methods. The PDs reveal an impressive performance in self-powered response and high responsivity and detectivity of 16.8 mA W−1 and 1.03 × 1011 Jones, respectively. Further analyses determined that the PDs show an ultrafast photoresponse with a rise and fall time of < 0.30 and 1.10 ms at 365 nm. Consequently, this study provides a feasible method for the synthesis of large-sized m-GeS2 and demonstrates its enormous potential in high-performance, self-powered UV photodetection. [ABSTRACT FROM AUTHOR]

Published
2022
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4. Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors

Author

Guoqiang Li, Jiawen You, Zheng Yulin, Kefeng Wu, Wenliang Wang, Hong Chen, Yang Yuhui, Siyu Huang, Zhengtang Luo, and Kong Deqi

Subjects
010302 applied physics, Electron mobility, Materials science, Physics and Astronomy (miscellaneous), business.industry, Schottky barrier, Photodetector, 02 engineering and technology, 021001 nanoscience & nanotechnology, medicine.disease_cause, 01 natural sciences, Responsivity, 0103 physical sciences, medicine, Optoelectronics, Dislocation, 0210 nano-technology, business, Ultraviolet, Stacking fault, Dark current
Abstract

The anisotropy of GaN(11-20) makes it possible to fabricate polarized ultraviolet (UV) photodetectors (PDs) for applications in fields such as remote sensing and airborne astronomical navigation. The defect density has a significant effect on the performance of GaN(11-20)-based UV PDs. However, the mechanism through which different defects and their densities affect the performance of these devices is unclear. Therefore, in this work, we investigated the mechanisms of the screw or mixed dislocation, edge dislocation, and basal stacking fault (BSF) densities affecting the dark current, responsivity, and response time of GaN (11-20)-based PDs, respectively. We observed that the screw or mixed dislocation increased the dark current mainly through reducing the Schottky barrier height and forming leakage current, whereas the edge dislocation and BSF decreased the responsivity by reducing the electron mobility. Furthermore, all the three types of defects increased the response time through forming traps to recombine the holes with electrons and thus delaying the escape of carriers. These results are highly significant for developing nonpolar GaN-based UV PDs.

Published
2021

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