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Optoelectronic integrated circuits, with a broad photonic transportation bandwidth, have emerged as a promising solution to fulfill the escalating demands for high-volume information transportation and processing. However, challenges persist in developing optoelectronic integrated circuits based on low-dimensional nanostructures, including limited integration density and high energy consumption. Here, we demonstrate a bidirectional optoelectronic device by integrating a light-emitting/harvesting CsPbBr3 nanoplate with a waveguiding/modulating/detecting CdS nanobelt. By configuring the CsPbBr3 nanoplate in a Schottky-type device structure with a metal electrode, bright electroluminescence was attained at a bias voltage of 18 V. Thanks to the electric field-tuned phonon-coupling effect, the waveguided light in the CdS nanobelt exhibited a high modulation depth of up to 94%, rendering it an excellent building block as optical modulators and optical switches. Moreover, the integrated nanostructure device showcased functionality in the photodetection mode. The proposed device architecture holds promise for broader applications, potentially extending to other perovskite-coupled II–VI semiconductor optoelectronic integrated circuits for expanding integration capacity and enhancing optoelectronic performance. [ABSTRACT FROM AUTHOR]

Two-dimensional van der Waals (vdWs) heterostructures have shown great potential in the field of electronic and optoelectronic applications over the recent decade. However, the controlled preparation of high-quality vdWs heterostructures remains a great challenge ascribing to the incompatibility of different material synthesis processes. Here, we report a two-step chemical vapor deposition method for the growth of high quality WS2 on a WSe2 template with a very low temperature of ∼550 °C, where WO3 nanosheets formed in the first step are further employed as the precursor for synthesis of the top WS2 layer in the second step. Such low growth temperatures in the second step also enable the effective protection of bottom WSe2 during the WS2 growth process and, therefore, result in high-quality WSe2/WS2 heterostructures. Photoluminescence characterizations are further conducted, where significant interlayer exciton emission is observed, indicating strong interlayer coupling in the heterostructure. Based on the obtained WSe2/WS2 heterostructure, dual-channel photosensitive devices were further designed and systematically studied, where high photoresponsivity (3 A/W) as well as fast response speed (<1 ms) are obtained. The developed WO3-assisted growth technique would provide an effective reference for the controlled synthesis of high quality vdWs heterostructures and promote further applications in high-performance optoelectronic devices. [ABSTRACT FROM AUTHOR]