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Your search keyword '"de Gendt, Stefan"' showing total 11 results
Start Over Author "de Gendt, Stefan" Journal applied physics letters
11 results on '"de Gendt, Stefan"'

3. Cu passivation for integration of gap-filling ultralow-k dielectrics

Author

Zhang, Liping, primary, de Marneffe, Jean-Francois, additional, Lesniewska, Alicja, additional, Verdonck, Patrick, additional, Heylen, Nancy, additional, Murdoch, Gayle, additional, Croes, Kristof, additional, Boemmels, Juergen, additional, Tokei, Zsolt, additional, De Gendt, Stefan, additional, and Baklanov, Mikhail R., additional

Published
2016
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4. Transition metal contacts to graphene

Author

Politou, Maria, primary, Asselberghs, Inge, additional, Radu, Iuliana, additional, Conard, Thierry, additional, Richard, Olivier, additional, Lee, Chang Seung, additional, Martens, Koen, additional, Sayan, Safak, additional, Huyghebaert, Cedric, additional, Tokei, Zsolt, additional, De Gendt, Stefan, additional, and Heyns, Marc, additional

Published
2015
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5. Cu passivation for integration of gap-filling ultralow-k dielectrics.

Author

Liping Zhang, de Marneffe, Jean-Francois, Lesniewska, Alicja, Verdonck, Patrick, Heylen, Nancy, Murdoch, Gayle, Croes, Kristof, Boemmels, Juergen, Tokei, Zsolt, De Gendt, Stefan, and Baklanov, Mikhail R.

Subjects
DIELECTRICS research, ELECTRIC properties, COPPER, PASSIVATION, CURING, COPPER oxidation, PLASMA-enhanced chemical vapor deposition, BREAKDOWN voltage
Abstract

For Cu/low-k interconnects, the reversed damascene is an alternative integration approach where the metal wires are patterned first and then the spacing filled with a flowable dielectric. In this paper, the replacement of a sacrificial template by gap-filling ultralow-k dielectrics is studied, focusing on yield and transport performance ("replacement dielectric" scheme). On non-passivated copper, the low-k curing processes induce severe damage to the metal lines, leading to the degraded electrical properties. This is confirmed by chemical inspection on the blanket Cu films and morphological inspection on patterned structures. In order to avoid Cu oxidation and out-diffusion at elevated temperature, Cu passivation by plasma-enhanced chemical vapor deposition SiCN is proposed and studied in detail. The inter-metal dielectric properties of replacement low-k are evaluated by resistance-capacitance and IV measurements using a Meander-Fork structure. By tuning the passivation layer thickness and ultraviolet curing time, high electrical yield is obtained with integrated porous low-k showing promising effective k-values (keff) and breakdown voltages (Ebd), confirming the interest of this specific integration scheme. [ABSTRACT FROM AUTHOR]

Published
2016
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9. Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films

Author

Puurunen, Riikka L., primary, Delabie, Annelies, additional, Van Elshocht, Sven, additional, Caymax, Matty, additional, Green, Martin L., additional, Brijs, Bert, additional, Richard, Olivier, additional, Bender, Hugo, additional, Conard, Thierry, additional, Hoflijk, Ilse, additional, Vandervorst, Wilfried, additional, Hellin, David, additional, Vanhaeren, Danielle, additional, Zhao, Chao, additional, De Gendt, Stefan, additional, and Heyns, Marc, additional

Published
2005
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11. Polarity effect on the temperature dependence of leakage current through HfO[sub 2]/SiO[sub 2] gate dielectric stacks.

Author

Xu, Zhen, Houssa, Michel, De Gendt, Stefan, and Heyns, Marc

Subjects
CAPACITORS, METAL oxide semiconductors
Abstract

A strong polarity effect on the temperature dependence of the leakage current in TiN/HfO[sub 2]/SiO[sub 2]/Si capacitors is reported. A model is proposed to explain these experimental results that combines tunneling through the stack and Frenkel-Poole hopping in the HfO[sub 2] layer, depending on the value of the gate voltage. It is shown that the polarity effect most probably results from the anisotropy of the band diagram of the HfO[sub 2]/SiO[sub 2] stack, as well as from the location of the shallow traps with respect to the conduction band of the HfO[sub 2] layer. Comparison of the model with the experimental results allows an estimate of the trap depth to be between 0.5 and 0.8 eV. [ABSTRACT FROM AUTHOR]

Published
2002
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