1. Photovoltaic high-performance broadband photodetector based on the heterojunction of MoS2/silicon nanopillar arrays.
- Author
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Zhao, Jijie, Liu, Huan, Deng, Lier, Du, Yuxuan, Wang, Jiuhong, Wen, Shuai, Wang, Shengyong, Zhu, Zhipeng, Xie, Fei, and Liu, Weiguo
- Subjects
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PHOTODETECTORS , *NANOWIRE devices , *HETEROJUNCTIONS , *PHOTOVOLTAIC effect , *SILICON surfaces , *PHOTOELECTRICITY , *SURFACE recombination - Abstract
[Display omitted] • Silicon nanopillar arrays(Si-NPAs) with high light absorption are used as substrates for photodetectors to improve light utilization. • Large-area coating deposition of layer less MoS 2 on the surface of three-dimensional silicon nanopillar arrays. • Combining MoS 2 with silicon to form a heterojunction reduces the silicon surface compound, boosting the photocurrent and reducing the dark current. • The use of reticulated, high-transmittance conductive thin Ag nanowires as the upper electrode provides multiple paths for electron transport without affecting light absorption and enhances the photodetector response speed. Two-dimensional MoS 2 has shown great potential in the photoelectric field because of its excellent optical and electrical properties. However, the performance of MoS 2 -based planar photodetector is constrained by the short transmission path and limited light absorption capacity of the planar thin layer of MoS 2. In this paper, highly sensitive MoS 2 /silicon nanopillar arrays(Si-NPAs) photodetector by coating the surface of silicon nanotrap light array with MoS 2. The interaction between light waves and silicon nanopillars and MoS 2 is significantly enhanced by the Fabry-Pérot-enhanced Mie resonance between pillars as well as the multiple reflection. In the meantime, a Van der Waals heterojunction is constructed between the MoS 2 and Si-NPAs coated across a large area. This is beneficial to address the poor performance of traditional two-dimensional photodetectors in light absorption and prevent the surface recombination of silicon-based photodetectors. According to the research results,the detector has 4.15 × 102 excellent rectification characteristics and 1.93 × 103 high switch ratio, and the photovoltaic effect is significant. The average external quantum efficiency of MoS 2 /Si-NPAs photodetector is 61.2% in the visible and near infrared bands, which is twice that of MoS 2 /planar silicon photodetector. At 850 nm, the responsiveness of the MoS 2 /Si NPAs photodetector is 0.48 A/W. the detection rate reaches 1.058 × 1012cm·Hz 1/2 W−1, which is 10.7 times higher than that of MoS 2 /planar silicon photodetector. To sum up, this study contributes a fresh idea to the design and application of high-performance devices. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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