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Surface sulfur (S) passivation on InP substrate was performed using a dry process – rapid thermal annealing under H 2 S atmosphere for III–V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabricated with atomic-layer-deposited HfO 2 film as a gate insulator were examined, and were compared with the similar devices with S passivation using a wet process – (NH 4 ) 2 S solution treatment. The H 2 S annealing provided solid S passivation with the strong resistance against oxidation compared with the (NH 4 ) 2 S solution treatment, although S profiles at the interface of HfO 2 /InP were similar. The decrease in electrical thickness of the gate insulator by S passivation was similar for both methods. However, the H 2 S annealing was more effective to suppress interface state density near the valence band edge, because thermal energy during the annealing resulted in stronger S bonding and InP surface reconstruction. Moreover, the flatband voltage shift by constant voltage stress was lower for the device with H 2 S annealing. [ABSTRACT FROM AUTHOR]

Highlights: [•] Atomic-layer-deposited HfO2 films grown at extremely low temperatures (≤100°C) were examined. [•] Growth saturation behavior of ALD was observed near to room temperatures. [•] Effects of growth temperatures and O3 concentrations on film properties are reported in detail. [•] Grown HfO2 films exhibited acceptable properties for flexible display and bio-electronic applications. [ABSTRACT FROM AUTHOR]

Abstract: Ru thin films were grown on polymorphic TiO2 thin film substrates at 230 and 250°C by atomic layer deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and an O2 gas. While the Ru films grown on amorphous and rutile TiO2 substrates showed a relatively long incubation cycle number of approximately 350 and 100 at 230 and 250°C, respectively, the Ru films grown on anatase TiO2 substrates exhibited a significantly shorter incubation delay which was attributed to the catalytic activity of anatase TiO2. This difference in the incubation cycle affected the surface morphology of the Ru films on different TiO2 substrates. [ABSTRACT FROM AUTHOR]