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Abstract: Ba0.6Sr0.4TiO3 thin films were deposited on Pt/SiO2/Si substrate by radio frequency magnetron sputtering. High-resolution transmission electron microscopy (HRTEM) observation shows that there is a transition layer at BST/Pt interface, and the layer is about 7–8nm thickness. It is found that the transition layer was diminished to about 2–3nm thickness by reducing the initial RF sputtering power. X-ray photoelectron spectroscopy (XPS) depth profiles show that high Ti atomic concentration results in a thick interfacial transition layer. Moreover, the symmetry ν of ɛ r–V curve of BST thin film is enhanced from 52.37 to 95.98%. Meanwhile, the tunability, difference of negative and positive remanent polarization (P r), and that of coercive field (E C) are remarkably improved. [Copyright &y& Elsevier]