35 results on '"Ma, Jin-An"'
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2. Large-area, liftoff nanoporous GaN distributed Bragg reflectors: Fabrication and application
3. Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping
4. Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties
5. Epitaxial relationships and optical properties of SnO2 films deposited on sapphire substrates
6. Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD
7. Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al 2O 3 (0 0 0 1) by MOCVD
8. Structural and optical properties of Ga 2(1− x) In 2 xO 3 films prepared on α-Al 2O 3 (0 0 0 1) by MOCVD
9. Highly thermal stable transparent conducting SnO 2:Sb epitaxial films prepared on α-Al 2O 3 (0 0 0 1) by MOCVD
10. Optical band gap of zinc nitride films prepared on quartz substrates from a zinc nitride target by reactive rf magnetron sputtering
11. Thickness dependence of properties of ZnO:Ga films deposited by rf magnetron sputtering
12. Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature
13. Comparison of the electrical and optical properties for SnO2:Sb films deposited on polyimide and glass substrates
14. Electrical and optical properties of SnO2:Sb films prepared on polyimide substrate by r.f. bias sputtering
15. Investigation of preparation and characterization of GaN films on sapphire (0001) substrates
16. Preparation and structural properties for GaN films grown on Si (1 1 1) by annealing
17. Thickness dependence of structural, optical and electrical properties of ZnO:Al films prepared on flexible substrates
18. Structural and optical properties of heteroepitaxial anatase titania films on MgAl 6 O 10 (100) substrates by MOCVD
19. Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature
20. Depth detection and fabrication of porous silicon without the stress
21. Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD
22. Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0001) by MOCVD
23. Structural and optical properties of Ga2(1−x)In2xO3 films prepared on α-Al2O3 (0001) by MOCVD
24. Highly thermal stable transparent conducting SnO2:Sb epitaxial films prepared on α-Al2O3 (0001) by MOCVD
25. Thickness dependence of properties of SnO2:Sb films deposited on flexible substrates
26. RETRACTED: Thickness dependence of structural, optical and electrical properties of ZnO:Al films prepared on flexible substrates
27. Epitaxial relationships and optical properties of SnO2 films deposited on sapphire substrates
28. Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD
29. Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0001) by MOCVD
30. Highly thermal stable transparent conducting SnO2:Sb epitaxial films prepared on α-Al2O3 (0001) by MOCVD
31. Comparison of the electrical and optical properties for SnO2:Sb films deposited on polyimide and glass substrates
32. Electrical and optical properties of SnO2:Sb films prepared on polyimide substrate by r.f. bias sputtering
33. Thickness dependence of structural, optical and electrical properties of ZnO:Al films prepared on flexible substrates
34. Thickness dependence of properties of SnO2:Sb films deposited on flexible substrates
35. Structural and optical properties of heteroepitaxial anatase titania films on MgAl6O10 (100) substrates by MOCVD.
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