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Abstract: SnO2 thin films were grown using metalorganic chemical vapor deposition (MOCVD) system on sapphire substrates with three different orientations: r-cut , a-cut , and m-cut . All the deposited films were epitaxial rutile films. The epitaxial orientation relationships were determined by X-ray Φ-scans: [010]SnO2||[100]Al2O3 and for the r-cut substrate; [010]SnO2||[001]Al2O3 and for the a-cut substrate; [010]SnO2||[001]Al2O3 and [100]SnO2||[010]Al2O3 for the m-cut substrate. The X-ray rocking curves yielded full width at half maximum (FWHM) of 0.78°, 1.32° and 0.70° for the (101) and (002) reflections of the SnO2 films on r-, a-, and m-cut sapphire substrates, respectively. The room-temperature photoluminescence (PL) spectra of SnO2 films grown on a-cut and m-cut substrates only showed a broad deep-level luminescence band. While a UV band-edge luminescence peak was observed for the film grown on r-cut substrate. [ABSTRACT FROM AUTHOR]

Abstract: Epitaxial In2O3 films have been deposited on Y-stabilized ZrO2 (YSZ) (100) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450–750°C). The film deposited at 650°C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In2O3(100)||YSZ(100) with In2O3[001]||YSZ[001]. The Hall mobility of the single-crystalline In2O3 film deposited at 650°C is as high as 66.5cm2 V−1 s−1 with carrier concentration of 1.5×1019 cm−3 and resistivity of 6.3×10−3 Ωcm. The absolute average transmittance of the obtained films in the visible range exceeds 95%. [ABSTRACT FROM AUTHOR]

Abstract: Sn-doped Ga1.4In0.6O3 films have been prepared on α-Al2O3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The Sn-doping was varied from 0% to 7% (atomic ratio). Polycrystalline films with resistivity of 4.9×10−3Ωcm, carrier concentration of 5.9×1019 cm−3 and Hall mobility of 21.4cm2 v−1 s−1 was obtained at 5at.% of Sn concentration. The average transmittance for the Sn-doped Ga1.4In0.6O3 films in the visible range was over 90%. The bandgap of the films varies from 3.85 to 4.21eV. [Copyright &y& Elsevier]

Abstract: Antimony-doped tin oxide (SnO2:Sb) single crystalline films have been prepared on α-Al2O3 (0001) substrates by metal organic chemical vapor deposition (MOCVD). The antimony doping was varied from 2% to 7% (atomic ratio). Post-deposition annealing of the SnO2:Sb films was carried out at 700–1100°C for 30min in atmosphere ambient. The effect of annealing on the structural, electrical and optical properties of the films was investigated in detail. All the SnO2:Sb films had good thermal stability under 900°C, and the 5% Sb-doped SnO2 film exhibited the best opto-electrical properties. Annealed above 900°C, the 7% Sb-doped SnO2 film still kept high thermal stability and showed good electrical and optical properties even at 1100°C. [Copyright &y& Elsevier]

Transparent conducting antimony-doped tin oxide (SnO2:Sb) films have been prepared on polyimide and Corning 7059 substrates by radio frequency magnetron-sputtering technique at low substrate temperature (30–220 °C). Polycrystalline SnO2:Sb films having the rutile structure were deposited with resistivity as low as 3.7×10−3 Ω cm on polyimide substrate and 2×10−3 Ω cm on glass substrate. The average transmittance exceeded 70.6 and 85.5% in the visible spectrum for 285 and 315 nm thick films deposited on polyimide and glass substrate, respectively. A comparison of the properties for the films deposited on glass and organic substrates was performed. [Copyright &y& Elsevier]

Antimony-doped tin oxide thin films, with a target composition ranging from 0 to 8 wt.% of Sb2O3 content, were deposited on polyimide (PI) substrates by r.f. bias sputtering. Structural, electrical and optical properties of these films were studied by varying the bias voltage. It was found that the best films with a resistivity as low as 1.8×10−3 Ω cm and an average transmission above 70% in the visible region can be obtained with a Sb2O3 target content of 6 wt.% and substrate temperature of 200 °C, and these performances corresponds to the highest crystallinity level. [Copyright &y& Elsevier]

For legal reasons this article has been removed by the publisher. The full article may be found in Applied Surface Science Volume 183, Number 2 (2001) pp. 137–142. [Copyright &y& Elsevier]

Films of antimony doped tin oxide (SnO2:Sb) of various thickness were deposited on flexible substrates (polypropylene adipate, PPA) by r.f. magnetron sputtering technique at substrate temperature of 80 °C. The structural, electrical and optical properties of the films were studied for different thickness in detail. X-ray diffraction (XRD) studies revealed that all the deposited films are polycrystalline and retain the rutile structure. Hall measurements showed that the thicker films (about 400 nm) have relatively higher Hall mobility compared with those of thinner films. The electrical resistivity was found to be about 2×10−3 Ω cm for a film with thickness of 400 nm deposited at substrate temperature of 80 °C, and the average transmittance in the visible range was found to be 84%. [Copyright &y& Elsevier]

Titania (TiO 2 ) films were synthesized on MgAl 6 O 10 (100) substrates by high vacuum metalorganic chemical vapor deposition (MOCVD). The crystal structures, surface and interface morphologies as well as the optical properties of the obtained TiO 2 films depending on substrate temperature were studied in detail. A single-crystal anatase TiO 2 (a-TiO 2 ) film was obtained at the substrate temperature of 550 °C. The epitaxial relationship between the a-TiO 2 film and MgAl 6 O 10 (100) substrate was a-TiO 2 (001) || MgAl 6 O 10 (100) with a-TiO 2 [100] || MgAl 6 O 10 [001]. The a-TiO 2 film showed an average transmittance of 95.1% in the visible range, and an optical band gap of 3.46 eV. The refractive indexes and extinction coefficients of the obtained TiO 2 films as a function of wavelength were analyzed. A broad photoluminescence peak centered at 535 nm was observed at room temperature and the corresponding luminescence mechanisms were discussed. [ABSTRACT FROM AUTHOR]