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Your search keyword '"Okuyama, Masanori"' showing total 20 results
Start Over Author "Okuyama, Masanori" Journal applied surface science
20 results on '"Okuyama, Masanori"'

15. Optical and interfacial properties of SiO2films deposited on Si by photo-CVD

Author

Inoue, Kohji, Okuyama, Masanori, and Hamakawa, Yoshihiro

Abstract

Reflectance and absorption spectra of photo-CVD SiO2films in the vacuum ultraviolet (VUV) light region have been measured. The estimated refractive index, n, and extinction coefficient, k, of the film deposited at 177°C in the 5–25 eV region are close to those of fused quartz. The films deposited at 177 and 280°C extend their absorption tails 0.4 eV more to the low energy region than fused quartz. An absorption peak at about 7.6 eV appears and increases with the deposition-temperature. This peak shows a peculiar deposition-temperature dependence as compared with the absorption peaks in the IR region such as Si-H and Si-OH bondings. The interface state density of MOS diodes made from the films deposited by photo-CVD is extremely low and its minimum value is about 2×1010cm-2eV-1.

Published
1990
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20. Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface

Author

Lee, Hyun, Lee, Dong Hun, Kanashima, Takeshi, and Okuyama, Masanori

Subjects
*PROPERTIES of matter, *FLUORINE, *GERMANIUM, *CHEMICAL reactions
Abstract

Abstract: Chemical reactivity of fluorine molecule (F2)–germanium (Ge) surface and dissociation of fluorine (F)–Ge bonding have been simulated by semi-empirical molecular orbital method theoretically, which shows that F on Ge surface is more stable compared to hydrogen. Ge MIS (metal insulator semiconductor) capacitor has been fabricated by using F2-treated Ge(100) substrate and HfO2 film deposited by photo-assisted MOCVD. Interface state density observed as a hump in the C–V curve of HfO2/Ge gate stack and its C–V hysteresis were decreased by F2-treatment of Ge surface. XPS (X-ray photoelectron spectroscopy) depth profiling reveals that interfacial layer between HfO2 and Ge is sub-oxide layer (GeO x or HfGeO x ), which is believed to be origin of interface state density. F was incorporated into interfacial layer easily by using F2-treated Ge substrate. These results suggest that interface defect of HfO2/Ge gate stack structure could be passivated by F effectively. [Copyright &y& Elsevier]

Published
2008
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