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Abstract: Wetting of (0001) α-Al2O3 single crystal by molten Mg was studied by an improved sessile drop method in a purified flowing Ar atmosphere. A distinct pinning–depinning behavior was observed during the evaporation-coupled wetting process. The underlying mechanism for this behavior was expatiated from the viewpoints of energetics and geometries at the triple junction. [Copyright &y& Elsevier]

Highlights: [•] Fe2O3/graphene nanocomposite was prepared by a facile hydrothermal method. [•] Graphene prevents Fe2O3 from aggregating. [•] The nanocomposite was first applied to the thermal decomposition of AP. [•] Fe2O3/graphene nanocomposite shows higher catalytic activity than Fe2O3. [•] Catalytic mechanism was analyzed in detail. [ABSTRACT FROM AUTHOR]

• Increase of temperature promote the decomposition of SiC, the nucleation of Al 4 C 3. • Extension of reaction time promote the further nucleation and growth of Al 4 C 3. • Cu, which is not surface-active, has a limited effect on weaken the Al SiC reaction. • Si content increases, dissolution of SiC and Al SiC reaction will be both weaken. • In Al Mg system, reaction to form MgAl 2 O 4 result in the weakened Al SiC reaction. The control of the Al SiC interfacial reaction is a critical process in the preparation of SiC-reinforced Al matrix composites. The brittle phase Al 4 C 3 formed during the interfacial reaction can reduce the strength, elastic modulus and corrosion resistance of the composites. The impregnation method was used in this paper to observe the interfacial reaction between pure Al and SiC under different reaction conditions. It was revealed that an increase in temperature is beneficial to the decomposition of SiC, the increase of atomic diffusion rate and the nucleation of Al 4 C 3. Furthermore, an extension of reaction time promoted the further nucleation and growth of Al 4 C 3. Meanwhile, the experimental results showed that Cu, Si and Mg all can reduce the amount of Al 4 C 3 formed on the interface to varying degrees and function through different influence mechanisms. These results provide significant guidance for the preparation of Al/SiC used in electronic packaging with good thermal conductivity. [ABSTRACT FROM AUTHOR]