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Your search keyword '"Silicon–Germanium alloys"' showing total 2 results
Start Over Descriptor "Silicon–Germanium alloys" Journal applied surface science
2 results on '"Silicon–Germanium alloys"'

1. Spectroscopic imaging ellipsometry of self-assembled SiGe/Si nanostructures.

Author

Alonso, M.I., Funke, S., González, A., Garriga, M., Vaccaro, P.O., Goñi, A.R., Ruiz, A., Alonso, M., and Thiesen, P.H.

Subjects
*ELLIPSOMETRY, *MOLECULAR self-assembly, *NANOSILICON, *MOLECULAR beam epitaxy, *SUBSTRATES (Materials science), *DIELECTRIC function
Abstract

Spectroscopic imaging ellipsometry is used to characterize films containing self-assembled SiGe/Si in-plane nanowires grown by molecular beam epitaxy on a Si(001) substrate. The spatial resolution of the order of ∼1 μm allows to study individual nanowires. The obtained images consist of both ψ and Δ values measured in every pixel. From them, spatially resolved contributions to the dielectric function within the films are well visible, coming for example from composition variations. In particular, a strong in-plane anisotropy of the optical response of the nanowires is evidenced. Spectroscopic measurements from different regions of the film are analyzed and compared to spectra calculated using standard ellipsometry multilayer models. The results show the potential of imaging ellipsometry to study micro- and nanostructured semiconductor samples. [ABSTRACT FROM AUTHOR]

Published
2017
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2. Quantification of strain through linear dichroism in the Si 1s edge X-ray absorption spectra of strained Si1−xGex thin films

Author

Stephen G. Urquhart, Mercedes Martinson, Adam P. Hitchcock, J.-M. Baribeau, Mitra Masnadi, Yongfeng Hu, Shaylin Eger, Wei Cao, Q.-F. Xiao, and Joseph C. Woicik

Subjects
Germanium alloys, Silicon, Materials science, Absorption spectroscopy, Dichroism, Thin films, X-ray spectromicroscopy, Analytical chemistry, Angle dependence, General Physics and Astronomy, Strained-Si, 02 engineering and technology, Linear dichroism, Total electron yield, 01 natural sciences, Compressive strain, Strain, NEXAFS, symbols.namesake, Silicon-germanium alloys, 0103 physical sciences, Epitaxial growth, 010306 general physics, Spectroscopy, Angle-dependent, X-ray absorption spectroscopy, X-ray spectroscopy, High spatial resolution, Germanium, Strain metrology, Absorption spectra, X-ray absorption spectrum, Surfaces and Interfaces, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, XANES, Si(1 0 0), Surfaces, Coatings and Films, Strain-dependent, Raman spectroscopy, X ray absorption spectroscopy, symbols, 0210 nano-technology
Abstract

We have quantitatively measured the angle dependence in the Silicon 1s X-ray absorption spectra of strained Si1−xGex thin films prepared by epitaxial growth on Si(1 0 0) substrates, through surface sensitive total electron yield detection. The linear dichroism difference extracted from these angle dependent X-ray absorption spectra is proportional to the degree of strain, as measured separately by Raman spectroscopy. This quantitative relationship provides a means to measure the compressive strain in Si1−xGex thin films. This strain-dependent X-ray absorption spectroscopy has the potential to realize a semiconductor strain metrology through high spatial resolution X-ray spectromicroscopy.

Published
2013
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