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Abstract: a-axis- and c-axis-oriented YBa2Cu3O7−δ (YBCO) films were epitaxially grown on (100) LaAlO3 substrates by laser chemical vapor deposition. The preferred orientation in the YBCO film changed from the a-axis to the c-axis with increasing laser powers from 77 to 158W (the deposition temperatures from 951 to 1087K). The a-axis-oriented YBCO film showed in-plane epitaxial growth of YBCO [001]//LAO [001], and the c-axis-oriented YBCO film showed that of YBCO [010]//LAO [001]. A c-axis-oriented YBCO film with a high critical temperature of 90K was prepared at a deposition rate of 90μmh−1, about 2–1000 times higher than that of metalorganic chemical vapor deposition. [ABSTRACT FROM AUTHOR]

Abstract: CeO2 films were prepared on LaMnO3/MgO/Gd2Zr2O7 multi-coated Hastelloy C276 tapes by laser chemical vapor deposition at different laser power (P L) from 46 to 101W. Epitaxial (100) CeO2 films were prepared at P L =46–93W (deposition temperature, T dep =705–792K). Epitaxial CeO2 films had rectangular-shaped grains at P L =46–77W (T dep =705–754K), while square-shaped grains were obtained at P L =85–93W (T dep =769–792K). CeO2 films showed a columnar microstructure. Epitaxial (100) CeO2 films with rectangular grains exhibited full width at half maximum of ω-scan on (200) reflection and ϕ-scan on (220) reflection of 3.4–3.2° and 6.0–7.2°, respectively. The deposition rate of the epitaxial (100) CeO2 films had a maximum of 4.6μmh−1 at P L =77W (T dep =754K). [Copyright &y& Elsevier]