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Start Over Author "Jihong Yim" Journal applied surface science advances
2 results on '"Jihong Yim"'

1. Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

Author

Eero Haimi, Oili M.E. Ylivaara, Jihong Yim, and Riikka L. Puurunen

Subjects
Atomic layer deposition, Lateral high aspect ratio structure, Saturation profile, X-ray microanalysis, Monte Carlo methods, Characterization techniques development, Materials of engineering and construction. Mechanics of materials, TA401-492, Industrial electrochemistry, TP250-261
Abstract

Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.

Published
2021
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2. Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

Author

Riikka L. Puurunen, Jihong Yim, Eero Haimi, Oili Ylivaara, School common, CHEM, VTT Technical Research Centre of Finland, Department of Chemical and Metallurgical Engineering, Catalysis, Aalto-yliopisto, and Aalto University

Subjects
Materials science, Silicon, Monte Carlo method, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Microanalysis, Atomic layer deposition, 0103 physical sciences, X-ray microanalysis, Thin film, Penetration depth, Materials of engineering and construction. Mechanics of materials, 010302 applied physics, Saturation profile, Monte Carlo methods, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Characterization techniques development, TP250-261, Surfaces, Coatings and Films, Industrial electrochemistry, chemistry, atomic layer deposition, TA401-492, 0210 nano-technology, Saturation (chemistry), Layer (electronics), Lateral high aspect ratio structure
Abstract

Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.

Published
2021

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