Search

Your search keyword '"X-rays Spectroscopy"' showing total 2 results
Start Over Descriptor "X-rays Spectroscopy" Journal catalysts
2 results on '"X-rays Spectroscopy"'

1. Structural and Electrical Characterization of Sputter-Deposited Gd0.1Ce0.9O2−δ Thin Buffer Layers at the Y-Stabilized Zirconia Electrolyte Interface for IT-Solid Oxide Cells

Author

Nunzia Coppola, Pierpaolo Polverino, Giovanni Carapella, Chiara Sacco, Alice Galdi, Alberto Ubaldini, Vincenzo Vaiano, Dario Montinaro, Luigi Maritato, and Cesare Pianese

Subjects
Solid Oxide Cells, Gadolinium Doped Ceria, RF magnetron Sputtering, Electrochemical Impedance Spectroscopy, X-rays Spectroscopy, Physical Vapour Deposition, Chemical technology, TP1-1185, Chemistry, QD1-999
Abstract

The use of a doped Ceria buffer layer and Physical Vapour Deposition (PVD) techniques for Solid Oxide Fuel Cells (SOFC) fabrication can limit the former, the formation of electrical insulating lanthanum, and strontium zirconates at the cathode/electrolyte interface, whereas the latter allows a better control of the materials interfaces. These effects allow for operation at intermediate temperature ranges. In this work, we study the structural and electrical properties of Gadolinium Doped Ceria (GDC) barrier layer deposited via the room temperature RF Sputtering technique on anode supported electrolytes and then annealed at high temperature. The crystal structure and the surface morphology of the GDC barrier layers have been analyzed and optimized varying the temperature ramp of the post-growth annealing procedure. The electrical behavior of the obtained samples has been investigated by Electrochemical Impedance Spectroscopy and compared to that of standard SOFC with screen-printed GDC barrier layers, the former showing a maximum high frequency and low frequency resistances reduction of about 50% and 46%, respectively, with respect to the latter at an operating temperature of 650 °C. The results clearly show an important improvement of SOFC performances when using sputter deposited GDC layers, linking the electrical properties to the structural and stoichiometric ones.

Published
2018
Full Text
View/download PDF

2. Structural and Electrical Characterization of Sputter-Deposited Gd0.1Ce0.9O2−δ Thin Buffer Layers at the Y-Stabilized Zirconia Electrolyte Interface for IT-Solid Oxide Cells

Author

Luigi Maritato, Vincenzo Vaiano, Dario Montinaro, Pierpaolo Polverino, Giovanni Carapella, Cesare Pianese, Alberto Ubaldini, Chiara Sacco, Alice Galdi, and Nunzia Coppola

Subjects
X-rays Spectroscopy, Materials science, Annealing (metallurgy), Oxide, 02 engineering and technology, Electrolyte, 010402 general chemistry, lcsh:Chemical technology, 01 natural sciences, Catalysis, Barrier layer, Solid Oxide Cells, RF magnetron Sputtering, lcsh:Chemistry, chemistry.chemical_compound, Electrochemical Impedance Spectroscopy, Sputtering, lcsh:TP1-1185, Physical and Theoretical Chemistry, Gadolinium-doped ceria, Physical Vapour Deposition, Gadolinium Doped Ceria, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Dielectric spectroscopy, Anode, Electrochemical impedance spectroscopy, Gadolinium doped ceria, Physical vapour deposition, RF magnetron sputtering, Solid oxide cells, X-rays spectroscopy, chemistry, Chemical engineering, lcsh:QD1-999, 0210 nano-technology
Abstract

The use of a doped Ceria buffer layer and Physical Vapour Deposition (PVD) techniques for Solid Oxide Fuel Cells (SOFC) fabrication can limit the former, the formation of electrical insulating lanthanum, and strontium zirconates at the cathode/electrolyte interface, whereas the latter allows a better control of the materials interfaces. These effects allow for operation at intermediate temperature ranges. In this work, we study the structural and electrical properties of Gadolinium Doped Ceria (GDC) barrier layer deposited via the room temperature RF Sputtering technique on anode supported electrolytes and then annealed at high temperature. The crystal structure and the surface morphology of the GDC barrier layers have been analyzed and optimized varying the temperature ramp of the post-growth annealing procedure. The electrical behavior of the obtained samples has been investigated by Electrochemical Impedance Spectroscopy and compared to that of standard SOFC with screen-printed GDC barrier layers, the former showing a maximum high frequency and low frequency resistances reduction of about 50% and 46%, respectively, with respect to the latter at an operating temperature of 650 &deg, C. The results clearly show an important improvement of SOFC performances when using sputter deposited GDC layers, linking the electrical properties to the structural and stoichiometric ones.

Published
2018

Catalog

Books, media, physical & digital resources
See catalog results