1. Structural, optical and electrical properties of indium doped Cu2ZnSn(S,Se)4 thin films synthesized by the DC and RF reactive magnetron cosputtering.
- Author
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Zeng, Fancong, Sui, Yingrui, Wu, Yanjie, Jiang, Dongyue, Wang, Zhanwu, Wang, Fengyou, Yao, Bin, and Yang, Lili
- Subjects
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THIN films , *INDIUM , *COPPER-zinc alloys , *MAGNETRONS , *OPTICAL properties , *SOLAR cells , *DOPING agents (Chemistry) - Abstract
Element doping into the Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber is an effective method to optimize the performance of thin film solar cells. In this study, the Cu 2 In x Zn 1-x Sn(S,Se) 4 (CIZTSSe) precursor film was deposited by magnetron cosputtering technique using indium (In) and quaternary Cu 2 ZnSnS 4 (CZTS) as targets. Meanwhile, the In content was controlled using the direct current (DC) power on In target (P In). A single kesterite CIZTSSe alloy was formed by successfully doping a small number of In3+ into the main lattice of CZTSSe. The partial Zn2+ cations were substituted by In3+ ions, resulting in improving properties of CZTSSe films. Morphological analysis showed that large grain CIZTSSe films could be obtained by doping In. The well-distributed, smooth, and dense film was obtained when the P In was 30 W. The band gap of CIZTSSe could be continuously adjusted from 1.27 to 1.05 eV as P In increased from 0 to 40 W. In addition, the CIZTSSe alloy thin film at P In = 30 W exhibited the best p-type conductivity with Hall mobility of 6.87 cm2V−1s−1, which is a potential material as the absorption layer of high-performance solar cells. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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