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The high chemical inertness of silicon carbide (SiC) makes it difficult for surface chemical reactions to occur. Surface oxidation reactions are crucial for improving the processing efficiency and surface quality of SiC wafers. Extensive research has been conducted on conventional aqueous polishing slurries, while investigations on non-aqueous solvent-based polishing slurries have emerged as alternative options for enhancing SiC surface processing, as evidenced by recent scholarly reports. However, the surface chemical reaction mechanism of silicon carbide in either water or other hydroxyl groups containing solvents remains still unclear and is not well understood. In this work, ReaxFF molecular dynamics simulation was used to study the dynamic reaction processes between solvents and 6H SiC (001) surfaces. The oxidation of SiC surface in water and alcohol solvent is found to go through three stages: in the first stage, the solvent molecules move towards the SiC surface and react with the uncoordinated Si atoms and C atoms on the surface; in the second stage, the solvent molecules adsorbed on the surface of SiC reduces the Si –C bonding energy and promotes the breaking of Si –C bonds; in the third final stage, the migration of OH and H on the SiC surface induces the formation of Si – O –Si bonds, which promotes the continuous oxidation of the SiC surface. The order of simulated chemical reactivity between solvent and silicon carbide surface is consistent with experimental polishing removal rates. The reaction mechanism of solvent on silicon carbide surface was proposed by combining ReaxFF simulation results with polishing experiments, AFM, and XPS data analysis, shedding new insights on better understanding the mechanism of SiC chemical mechanical polishing. [ABSTRACT FROM AUTHOR]