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Effects of oxidation cross-linking and sintering temperature on the microstructure evolution, thermal conductivity and electrical resistivity of continuous freestanding polymer-derived SiC films were investigated. The as-received films consisting of β-SiC nanocrystals embedded in amorphous SiO x C y and free carbon nanosheets were fabricated via melt spinning of polycarbosilane (PCS) precursors and cured for 3 h/10 h followed by pyrolysis from 900 °C to 1200 °C. Results reveal that nanoscale structure (β-SiC/SiO x C y /C free ) provides an ingenious strategy for constructing highly thermal conductive, highly insulating and highly flexible complexes. In particular, the 3 h-cured films sintered at 1200 °C with satisfying thermal conductivity (46.8 W m −1 K −1 ) and electrical resistivity (2.1 × 10 8 Ω m) are suitable for the realization of high-performance substrates. A remarkable synergistic effect (lattice vibration of β-SiC nanocrystals and close-packed SiO x C y , free-electron heat conduction of β-SiC and free carbon, and supporting role of oxygen vacancy) contributing to thermal conductivity improvement is proposed based on the analysis of microstructure, intrinsic properties and simulations. Eventually, the SiC films without additional dielectric layers are directly silk-screen printed with high-temperature silver paste and used as heat dissipation substrates for high-power LED devices via chip-on-board (COB) package. The final devices can emit bright light with low-junction temperature (52.6 °C) and good flexibility owing to the mono-layer SiC substrate with low thermal resistance and desirable mechanical properties. This work offers an effective approach to design and fabricate flexible heat dissipation ceramic substrates for thermal management in advanced electronic packaging fields. [ABSTRACT FROM AUTHOR]

In this contribution, a technique based on molding polycarbosilane-vinyltriethoxysilane-graphene oxide (PCS-VTES-GO) precursors synthesized by chemical modification was introduced to fabricate monolithic rGO/SiC(O) nanocomposite ceramics. Results reveal that the monoliths pyrolyzed at different temperatures (1100–1500 °C) consist of β-SiC nanocrystals homogeneously embedded in amorphous SiO x C y /C free , and multilayered rGO nanosheets composited with β-SiC/SiO x C y /C free . Their nanocomposite structure provides an ingenious strategy for constructing complexes with good integrity, high ceramic yield and low linear shrinkage. This improvement is primarily attributed to the presence of GO (as graft polymers and sintering additives) which enlarges the cross-linking structure of precursors and inhibits the growth of β-SiC nanocrystals during the pyrolysis process. The final rGO/SiC(O) monoliths sintered at 1200 °C with higher hardness (19.81 GPa), satisfying ceramic yield (80.98%) and linear shrinkage (25.23%) promise to be candidates for making complex-shaped ceramic components in a simple and economical manner. [ABSTRACT FROM AUTHOR]